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Phototransistor. PTP81608T08 Datasheet

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Phototransistor. PTP81608T08 Datasheet






PTP81608T08 Phototransistor. Datasheet pdf. Equivalent




PTP81608T08 Phototransistor. Datasheet pdf. Equivalent





Part

PTP81608T08

Description

Phototransistor



Feature


Features Small double-end package High photo sensitivity High reliability S pectral range of sensitivity: 400-1100n m Fast Response time RoHS compliance Applications Infrared sensor Infrared Touch Panel Solutions PTP81608T08 SMD Type Phototransistor Description The P TP81608T08 is silicon NPN Phototransist or The device has wide spectral sensiti vity range from 40.
Manufacture

CT Micro

Datasheet
Download PTP81608T08 Datasheet


CT Micro PTP81608T08

PTP81608T08; 0 to 1100nm. Package Outline Schematic Emitter Collector CT Micro Propriet ary & Confidential Page 1 Rev 0(Preli minary) Jan, 2019 PTP81608T08 SMD Type Phototransistor Absolute Maximum Rati ng at 250C Symbol Parameters IC Coll ector Current BVCEO Collector-Emitter Voltage BVECO Emitter-Collector Voltag e Topr Operating Temperature Tstg Sto rage Temperature .


CT Micro PTP81608T08

Tsol Soldering Temperature Pto Total Po wer Dissipation Optical Characteristic s Symbol Parameters  Spectral Ban dwidth P θ1/2 Peak Sensitivity Vi ew Angle Test Conditions - VCE=5V Ele ctrical Characteristics Symbol Parame ters ICEO Dark Current VCE(sat) Coll ector-Emitter Saturation Voltage IC Co llector Light Current CT Terminal Capa citance Test Condition.


CT Micro PTP81608T08

s Ee=0mW /cm2 VCE=20V Ee=1mW /cm2 IC=0.3 mA Ee=1mW /cm2 P=940nm, VCE=5V Ee=0m W /cm2 f=1MHz ,VCE=5V Ratings 20 35 5 -40 ~ +85 -40 ~ +100 260 150 Units mA V V 0C 0C 0C mW Notes 1 2 3 Min Typ M ax Units Notes 400 - 1100 nm - 820 - nm - 55 - deg Min Typ Max Units Notes - - 100 nA - - 0.4 V 0.30 0.60 - m A 4 - 2.35 - pF CT Micro Proprietar y & Confidential Page.

Part

PTP81608T08

Description

Phototransistor



Feature


Features Small double-end package High photo sensitivity High reliability S pectral range of sensitivity: 400-1100n m Fast Response time RoHS compliance Applications Infrared sensor Infrared Touch Panel Solutions PTP81608T08 SMD Type Phototransistor Description The P TP81608T08 is silicon NPN Phototransist or The device has wide spectral sensiti vity range from 40.
Manufacture

CT Micro

Datasheet
Download PTP81608T08 Datasheet




 PTP81608T08
Features
Small double-end package
High photo sensitivity
High reliability
Spectral range of sensitivity: 400-1100nm
Fast Response time
RoHS compliance
Applications
Infrared sensor
Infrared Touch Panel Solutions
PTP81608T08
SMD Type Phototransistor
Description
The PTP81608T08 is silicon NPN Phototransistor
The device has wide spectral sensitivity range from
400 to 1100nm.
Package Outline
Schematic
Emitter
Collector
CT Micro
Proprietary & Confidential
Page 1
Rev 0(Preliminary)
Jan, 2019




 PTP81608T08
PTP81608T08
SMD Type Phototransistor
Absolute Maximum Rating at 250C
Symbol
Parameters
IC Collector Current
BVCEO Collector-Emitter Voltage
BVECO Emitter-Collector Voltage
Topr Operating Temperature
Tstg Storage Temperature
Tsol Soldering Temperature
Pto Total Power Dissipation
Optical Characteristics
Symbol
Parameters
Spectral Bandwidth
P
θ1/2
Peak Sensitivity
View Angle
Test Conditions
-
-
VCE=5V
Electrical Characteristics
Symbol
Parameters
ICEO Dark Current
VCE(sat)
Collector-Emitter
Saturation Voltage
IC Collector Light Current
CT Terminal Capacitance
Test Conditions
Ee=0mW /cm2
VCE=20V
Ee=1mW /cm2
IC=0.3mA
Ee=1mW /cm2
P=940nm, VCE=5V
Ee=0mW /cm2
f=1MHz ,VCE=5V
Ratings
20
35
5
-40 ~ +85
-40 ~ +100
260
150
Units
mA
V
V
0C
0C
0C
mW
Notes
1
2
3
Min Typ Max Units Notes
400 - 1100 nm
- 820 - nm
- 55 - deg
Min Typ Max Units Notes
- - 100 nA
- - 0.4 V
0.30 0.60
-
mA
4
- 2.35 -
pF
CT Micro
Proprietary & Confidential
Page 2
Rev 0(Preliminary)
Jan, 2019




 PTP81608T08
PTP81608T08
SMD Type Phototransistor
Switching Characteristics
Symbol
Parameters
tr Rise Time
tf Fall Time
ton Turn on Delay Time
toff Turn off Delay Time
Notes:
1 : Test conditions : IC=100μA, Ee=0mW/cm2.
2 : Test conditions : IE=100μA, Ee=0mW/cm2.
3 : Soldering time5 seconds.
4 : IC Bin Rank :
5 : Test circuit:
Test Conditions
Vce = 5V, RL = 100
IC=1.0mA
Min Typ Max Units Notes
-4-
- 5.2 -
µs 5
- 7.3 -
- 6.1 -
CT Micro
Proprietary & Confidential
Page 3
Rev 0(Preliminary)
Jan, 2019



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