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Phototransistor Optocoupler. CT814 Datasheet

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Phototransistor Optocoupler. CT814 Datasheet






CT814 Optocoupler. Datasheet pdf. Equivalent




CT814 Optocoupler. Datasheet pdf. Equivalent





Part

CT814

Description

Phototransistor Optocoupler



Feature


CT814 Series AC Input 4-Pin Phototransis tor Optocoupler Features High isolati on 5000 VRMS CTR flexibility available see order information DC input with t ransistor output External Creepage ≥ 7.5mm (S/SL Type) External Creepage 8.0mm (SLM Type) Operating Temperat ure range - 55 °C to 110 °C Regulato ry Approvals  UL - UL1577 (E364000)  VDE - EN60747-5-5(VDE088.
Manufacture

CT Micro

Datasheet
Download CT814 Datasheet


CT Micro CT814

CT814; 4-5)  CQC – GB4943.1, GB8898  IE C60065, IEC60950 Description The CT814 series consists of a phototransistor o ptically coupled to two gallium arsenid e Infrared-emitting diode, connected in inverse parallel, in a 4-lead DIP pack age with bending options. Applications Switch mode power supplies Computer p eripheral interface Microprocessor sys tem interface Package O.


CT Micro CT814

utline Schematic CT Micro Proprietary & Confidential Page 1 Rev 3 Jul, 2019 CT814 Series AC Input 4-Pin Phototran sistor Optocoupler Absolute Maximum Ra ting at 25oC Symbol Parameters VISO Isolation voltage PTOT Total power dis sipation TOPR Operating temperature T STG Storage temperature TSOL Soldering temperature Emitter IF IF(TRANS) Fo rward current Peak.


CT Micro CT814

transient current (≤1μs P.W,300pps) PD Emitter power dissipation Detector PD Detector power dissipation BVCEO Collector-Emitter Breakdown Voltage BV ECO Emitter-Collector Breakdown Voltage IC Collector Current Ratings 5000 20 0 -55 ~ +110 -55 ~ +150 260 ±60 1 100 150 80 6 50 Units VRMS mW oC oC oC No tes mA A mW mW V V mA CT Micro Propr ietary & Confidential .

Part

CT814

Description

Phototransistor Optocoupler



Feature


CT814 Series AC Input 4-Pin Phototransis tor Optocoupler Features High isolati on 5000 VRMS CTR flexibility available see order information DC input with t ransistor output External Creepage ≥ 7.5mm (S/SL Type) External Creepage 8.0mm (SLM Type) Operating Temperat ure range - 55 °C to 110 °C Regulato ry Approvals  UL - UL1577 (E364000)  VDE - EN60747-5-5(VDE088.
Manufacture

CT Micro

Datasheet
Download CT814 Datasheet




 CT814
CT814 Series
AC Input 4-Pin Phototransistor Optocoupler
Features
High isolation 5000 VRMS
CTR flexibility available see order information
DC input with transistor output
External Creepage ≥ 7.5mm (S/SL Type)
External Creepage 8.0mm (SLM Type)
Operating Temperature range - 55 °C to 110 °C
Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC GB4943.1, GB8898
IEC60065, IEC60950
Description
The CT814 series consists of a phototransistor
optically coupled to two gallium arsenide
Infrared-emitting diode, connected in inverse
parallel, in a 4-lead DIP package with bending
options.
Applications
Switch mode power supplies
Computer peripheral interface
Microprocessor system interface
Package Outline
Schematic
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Jul, 2019




 CT814
CT814 Series
AC Input 4-Pin Phototransistor Optocoupler
Absolute Maximum Rating at 25oC
Symbol
Parameters
VISO Isolation voltage
PTOT Total power dissipation
TOPR Operating temperature
TSTG Storage temperature
TSOL Soldering temperature
Emitter
IF
IF(TRANS)
Forward current
Peak transient current (≤1μs P.W,300pps)
PD Emitter power dissipation
Detector
PD Detector power dissipation
BVCEO Collector-Emitter Breakdown Voltage
BVECO Emitter-Collector Breakdown Voltage
IC Collector Current
Ratings
5000
200
-55 ~ +110
-55 ~ +150
260
±60
1
100
150
80
6
50
Units
VRMS
mW
oC
oC
oC
Notes
mA
A
mW
mW
V
V
mA
CT Micro
Proprietary & Confidential
Page 2
Rev 3
Jul, 2019




 CT814
CT814 Series
AC Input 4-Pin Phototransistor Optocoupler
Electrical Characteristics TA = 25°C (unless otherwise specified)
Emitter Characteristics
Symbol
Parameters
VF Forward voltage
CIN Input Capacitance
Test Conditions
IF=±10mA
f= 1MHz
Min Typ Max Units Notes
- 1.24 1.4 V
- 30 - pF
Detector Characteristics
Symbol
Parameters
BVCEO Collector-Emitter Breakdown
BVECO Emitter-Collector Breakdown
ICEO Collector-Emitter Dark Current
Test Conditions
IC= 100µA
IE= 100µA
VCE= 20V, IF=0mA
Min Typ Max Units Notes
80 -
-V
6- -V
- - 100 nA
Transfer Characteristics
Symbol
Parameters
CT814
CTR Current Transfer Ratio CT814A
CT814B
CTR Symmetry
VCE(SAT)
Collector-Emitter Saturation
Voltage
RIO Isolation Resistance
CIO Isolation Capacitance
Test Conditions
IF= ±1mA, VCE= 5V
IF= ±1mA, VCE= 5V
IF= ±20mA, IC= 1mA
VIO= 500VDC
f= 1MHz
Min Typ
20 -
50 -
100 -
0.7 -
- 0.04
5x1010
-
-
0.5
Max
300
150
300
1.3
Units Notes
%
0.2 V
-
1 pF
Switching Characteristics
Symbol
Parameters
tr Rise Time
tf Fall Time
Test Conditions
Min Typ Max Units Notes
-6-
IC= 2mA, VCE= 2V, RL= 100
µs
-8-
CT Micro
Proprietary & Confidential
Page 3
Rev 3
Jul, 2019



Recommended third-party CT814 Datasheet






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