Photo Diode. PDP91608BT11 Datasheet

PDP91608BT11 Diode. Datasheet pdf. Equivalent

Part PDP91608BT11
Description Photo Diode
Feature PDP91608BT11 SMD Type Photo Diode with Daylight Filter Features  Small double-end package  High r.
Manufacture CT Micro
Datasheet
Download PDP91608BT11 Datasheet



PDP91608BT11
PDP91608BT11
SMD Type Photo Diode with Daylight Filter
Features
Small double-end package
High reliability
Spectral range of sensitivity: 760-1100nm
Fast Response time
RoHS compliance
Applications
Infrared sensor
Description
The PDP91608BT11 is a silicon photo diode housed
in a miniature SMD package. The device comes with
a superior filtering for visible light by utilizing special
black molding compound.
Package Outline
Schematic
Cathode
CT Micro
Only for Canon
Anode
Page 1
Rev 0.2(Preliminary)
Jun, 2018



PDP91608BT11
PDP91608BT11
SMD Type Photo Diode with Daylight Filter
Absolute Maximum Rating at 250C
Symbol
Parameters
VR Reverse Voltage
Topr Operating Temperature
Tstg Storage Temperature
Tsol Soldering Temperature
Pto Total Power Dissipation
Ratings
33
-40 ~ +85
-40 ~ +100
260
150
Units
V
0C
0C
0C
mW
Notes
1
Electro-Optical Characteristics TA = 25°C (unless otherwise specified)
Optical Characteristics
Symbol
Parameters
Spectral Bandwidth
P Peak Sensitivity
θ1/2
View Angle at X axis
View Angle at Y axis
Test Conditions
-
-
VR=5V
Min Typ Max Units Notes
760 - 1100 nm
- 900 - nm
- 52.5 -
deg
- 47.5 -
deg
Electrical Characteristics
Symbol
Parameters
ID Dark Current
VBR Reverse Breakdown Voltage
VOC Open-Circuit Voltage
ISC Short-Circuit Current
IR Reverse Light Current
CT Transition Capacitance
Test Conditions
Ee=0mW /cm2
VR=10V
Ee=0mW /cm2
IR=100uA
Ee=1mW /cm2
P=940nm
Ee=1mW /cm2
P=940nm, VR=5V
Ee=0mW /cm2
f=1MHz ,VR=5V
Min Typ Max Units Notes
- - 10 nA
33 -
- 0.30
- 1.50
1.0 1.83
-
-
-
-
V
V
µA
µA
- 0.85 -
pF
CT Micro
Only for Canon
Page 2
Rev 0.2(Preliminary)
Jun, 2018





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