HIRP2406W14-B10 SMD Type 850nm Infrared Emitter
Features
Small double-end package Viewing Angle at X axis (Note3) =...
HIRP2406W14-B10 SMD Type 850nm Infrared Emitter
Features
Small double-end package Viewing Angle at X axis (Note3) = 550 High reliability Good spectral matching to Si photo detector RoHS compliance
Applications
Infrared sensor Infrared Touch Panel Solutions
Description
The HIRP2406W14-B10 is a GaAlAs infrared LED housed in a miniature SMD package. The device has a peak wavelength of 850nm LED spectrally matched with photo
transistor or photodiode.
Package Outline
Schematic
Anode
Cathode
CT Micro Proprietary & Confidential
Page 1
Rev 1 Apr, 2018
HIRP2406W14-B10 SMD Type 850nm Infrared Emitter
Absolute Maximum Rating at 250C
Symbol
Parameters
IF Continuous Forward Current
IFP Peak Forward Current
VR Reverse Voltage
Topr Operating Temperature
Tstg Storage Temperature
Tsol Soldering Temperature
PD Power Dissipation at(or below) 25℃ Free Air Temperature
RTHJA Junction to Ambient Thermal Resistance
Ratings 70 0.7 5
-40 ~ +85 -40 ~ +100
260 140 540
Units mA A V 0C 0C 0C mW 0C/W
Notes 1
2
Electro-Optical Characteristics TA = 25°C (unless otherwise specified)
Optical Characteristics
Symbol
Parameters
Ie Radiant Intensity
λp Peak Wavelength
Δλ Spectral Bandwidth
θ1/2
Angle of Half Intensity (X) Angle of Half Intensity (Y)
Test Conditions IF=20mA IF =70mA IF=20mA IF=20mA
IF=20mA
Min Typ Max Units Notes
2.50 4.0 - 13.5
mW/sr
-
- 850 - nm
- 30 - nm
- 55.0 deg 3
- 25.0 -
Electrical Characteristics
Symbol
Parameters
VF Forward Volta...