HIRP3010Q20-B30

HIRP3010Q20-B30 SMD Type 850nm Infrared Emitter Features  Small double-end package  Viewing Angle at X axis (Note3) = 650  High reliability  Good spectral matching to Si photo detector  RoHS compliance Applications  Infrared sensor  Light barrier  Infrared Touch Panel Solutions Description The HIRP3010Q20-B30 is a GaAlAs infrared LED housed in a miniature SMD package. The device has a peak wavelength of 850nm LED spectrally matched with phototransistor or photodiode. Package Outline Schematic Anode Cathode CT Micro Proprietary & Confidential Page 1 Rev 1 May, 2017 HIRP3010Q20-B30 SMD Type 850nm Infrared Emitter Absolute Maximum Rating at 250C Symbol Parameters IF Continuous Forward Current IFP Peak Forward Current VR Reverse Voltage Topr Operating Temperature Tstg Storage Temperature Tsol Soldering Temperature PD Power Dissipation at(or below) 25℃Free Air Temperature Ratings 70 0.7 5 -40 ~ +85 -40 ~ +100 260 140 Units mA A V 0C 0C 0C mW Notes 1 2 Electro-Optical Characteristics TA = 25°C (unless otherwise specified) Optical Characteristics Symbol Parameters Ie Radiant Intensity λp Peak Wavelength Δλ Spectral Bandwidth θ1/2 Angle of Half Intensity (X) Angle of Half Intensity (Y) Test Conditions IF=20mA IF =70mA IF=20mA IF=20mA IF=20mA Min Typ Max Units Notes 1.0 2.1 - 7.0 mW/sr - 830 850 870 nm - 30 - nm - 65 deg 3 - 65 - Electrical Characteristics Symbol Parameters VF Forward Voltage IR Reverse Current Test Conditions IF...