Photo Diode
PDP91608BT09 SMD Type Photo Diode with Daylight Filter
Features
Small double-end package High sensitivity High re...
Description
PDP91608BT09 SMD Type Photo Diode with Daylight Filter
Features
Small double-end package High sensitivity High reliability Spectral range of sensitivity: 700-1100nm Fast Response time RoHS compliance
Applications
Infrared sensor
Description
The PDP91608BT09 is a silicon photo diode housed in a miniature SMD package. The device comes with a superior filtering for visible light by utilizing special black molding compound.
Package Outline
Schematic
Anode
CT Micro Proprietary & Confidential
Cathode
Page 1
Rev 0.1 (Preliminary) Jun, 2017
PDP91608BT09 SMD Type Photo Diode with Daylight Filter
Absolute Maximum Rating at 250C
Symbol
Parameters
VR Reverse Voltage
Topr Operating Temperature
Tstg Storage Temperature
Tsol Soldering Temperature
Pto Total Power Dissipation
Ratings 33
-40 ~ +85 -40 ~ +100
260 150
Units V 0C 0C 0C
mW
Notes 1
Electro-Optical Characteristics TA = 25°C (unless otherwise specified)
Optical Characteristics
Symbol
Parameters
Spectral Bandwidth
P Peak Sensitivity θ1/2 View Angle
Test Conditions -
VR=5V
Min Typ Max Units Notes 700 - 1100 nm
- 900 - nm - 45 - deg
Electrical Characteristics
Symbol
Parameters
ID Dark Current
VBR Reverse Breakdown Voltage VOC Open-Circuit Voltage ISC Short-Circuit Current
IRL Reverse Light Current
CT Transition Capacitance
Test Conditions Ee=0mW /cm2 VR=10V Ee=0mW /cm2 IR=100uA Ee=1mW /cm2 P=940nm Ee=1mW /cm2
P=940nm, VR=5V Ee=0mW /cm2 f=1MHz ,VR=5V
Min Typ Max Units Notes - - 10 n...
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