4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38 H11A1, H11A2, H11A3, H11A4, H11A5
DC Input 6-Pin Phototransistor Optocoup...
4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38 H11A1, H11A2, H11A3, H11A4, H11A5
DC Input 6-Pin Photo
transistor Optocoupler
Features
High isolation 5000 VRMS CTR flexibility available see order information DC input with
transistor output Operating temperature range - 55 °C to 110 °C
Regulatory Approvals
UL - UL1577 (E364000) VDE - EN60747-5-5(VDE0884-5) CQC – GB4943.1, GB8898 IEC60065, IEC60950
Applications
Switch mode power supplies Computer peripheral interface
Microprocessor system interface
Description
The 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38, H11A1, H11A2, H11A3, H11A4, H11A5 series consists of a photo
transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 6-lead DIP package different lead forming options.
Package Outline
Schematic
Note: Different bending options available. See package dimension.
CT Micro Proprietary & Confidential
Page 1
Rev 2 Apr, 2016
4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38 H11A1, H11A2, H11A3, H11A4, H11A5
DC Input 6-Pin Photo
transistor Optocoupler
Absolute Maximum Rating at 25oC
Symbol
Parameters
VISO Isolation voltage
TOPR Operating temperature
TSTG Storage temperature
TSOL Soldering temperature
Emitter
IF IF(TRANS)
Forward current Peak transient current (≤1μs P.W,300pps)
VR Reverse voltage
PD Power dissipation
Detector
PD Power dissipation
BVCEO Collector-Emitter Breakdown Voltage
BVCBO Collector-Base Breakdown Voltage
BVECO Emitter-Collector Breakdown Volt...