Photo Diode. PDP93015BT12 Datasheet

PDP93015BT12 Diode. Datasheet pdf. Equivalent

Part PDP93015BT12
Description Photo Diode
Feature PDP93015BT12 SMD Type Photo Diode with Daylight Filter Features  Small double-end package  High r.
Manufacture CT Micro
Datasheet
Download PDP93015BT12 Datasheet



PDP93015BT12
PDP93015BT12
SMD Type Photo Diode with Daylight Filter
Features
Small double-end package
High reliability
High Reverse Breakdown
High Sensitivity
Fast Response time
RoHS compliance
Applications
Infrared sensor
Description
The PDP93015BT12 is a silicon photo diode housed
in a miniature SMD package. The device comes with
a superior filtering for visible light by utilizing special
black molding compound.
Package Outline
Schematic
Cathode
Anode
CT Micro
Proprietary & Confidential
Page 1
Rev 0.1(Preliminary)
Sep, 2016



PDP93015BT12
PDP93015BT12
SMD Type Photo Diode with Daylight Filter
Absolute Maximum Rating at 250C
Symbol
Parameters
VR Reverse Voltage
Topr Operating Temperature
Tstg Storage Temperature
Tsol Soldering Temperature
Pto Total Power Dissipation
Ratings
33
-40 ~ +85
-40 ~ +100
260
140
Units
V
0C
0C
0C
mW
Notes
1
Electro-Optical Characteristics TA = 25°C (unless otherwise specified)
Optical Characteristics
Symbol
Parameters
Spectral Bandwidth
P Peak Sensitivity
θ1/2 View Angle
Test Conditions
-
-
VR=5V
Min Typ Max Units Notes
700 - 1100 nm
- 900 - nm
- 52.5 -
deg
Electrical Characteristics
Symbol
Parameters
ID Dark Current
VBR Reverse Breakdown Voltage
VOC Open-Circuit Voltage
ISC Short-Circuit Current
IRL Reverse Light Current
CT Transition Capacitance
Test Conditions
Ee=0mW /cm2
VR=10V
Ee=0mW /cm2
IR=100uA
Ee=1mW /cm2
P=940nm
Ee=1mW /cm2
P=940nm, VR=5V
Ee=0mW /cm2
f=1MHz ,VR=5V
Min Typ Max Units Notes
- - 10 nA
33 -
- 0.29
- 1.0
0.50 1.3
-
-
-
-
V
V
µA
µA
- 3.65 -
pF
CT Micro
Proprietary & Confidential
Page 2
Rev 0.1(Preliminary)
Sep, 2016





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