Phototransistor. PTP83016BT24 Datasheet

PTP83016BT24 Phototransistor. Datasheet pdf. Equivalent

Part PTP83016BT24
Description Phototransistor
Feature PTP83016BT24 SMD Type Phototransistor with Daylight Filter Features  Small double-end package  Hi.
Manufacture CT Micro
Datasheet
Download PTP83016BT24 Datasheet



PTP83016BT24
PTP83016BT24
SMD Type Phototransistor with Daylight Filter
Features
Small double-end package
High photo sensitivity
High reliability
Spectral range of sensitivity: 760-1100nm
Fast Response time
RoHS compliance
Applications
Infrared sensor
Infrared Touch Panel Solutions
Description
The PTP83016BT24 is silicon NPN Phototransistor
housed in a miniature SMD package. The device
comes with a superior filtering for visible light by
utilizing special black molding compound.
Package Outline
Schematic
Emitter
CT Micro
Proprietary & Confidential
Collector
Page 1
Rev 4
Jul, 2016



PTP83016BT24
PTP83016BT24
SMD Type Phototransistor with Daylight Filter
Absolute Maximum Rating at 250C
Symbol
Parameters
IC Collector Current
BVCEO Collector-Emitter Voltage
BVECO Emitter-Collector Voltage
Topr Operating Temperature
Tstg Storage Temperature
Tsol Soldering Temperature
Pto Total Power Dissipation
Optical Characteristics
Symbol
Parameters
Spectral Bandwidth
P Peak Sensitivity
θ1/2 View Angle
Test Conditions
-
-
VCE=5V
Electrical Characteristics
Symbol
Parameters
ICEO Dark Current
VCE(sat)
Collector-Emitter
Saturation Voltage
IC Collector Light Current
CT Terminal Capacitance
Test Conditions
Ee=0mW /cm2
VCE=20V
Ee=1mW /cm2
IC=1.4mA
Ee=1mW /cm2
P=940nm, VCE=5V
Ee=0mW /cm2
f=1MHz ,VCE=5V
Ratings
20
35
5
-40 ~ +85
-40 ~ +100
260
150
Units
mA
V
V
0C
0C
0C
mW
Notes
1
2
3
Min Typ Max Units Notes
760 - 1100 nm
- 880 - nm
- 22.5 -
deg
Min Typ Max Units Notes
- - 100 nA
- - 0.4 V
1.4 2.8 4.4 mA
4
- 3.80 -
pF
CT Micro
Proprietary & Confidential
Page 2
Rev 4
Jul, 2016





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