Infrared Emitter. SIRP3015X12-J5 Datasheet

SIRP3015X12-J5 Emitter. Datasheet pdf. Equivalent

Part SIRP3015X12-J5
Description Infrared Emitter
Feature SIRP3015X12-J5 SMD Type 880nm Infrared Emitter Features  Small double-end package  Viewing Angle .
Manufacture CT Micro
Datasheet
Download SIRP3015X12-J5 Datasheet



SIRP3015X12-J5
SIRP3015X12-J5
SMD Type 880nm Infrared Emitter
Features
Small double-end package
Viewing Angle = 42.50
High reliability
Good spectral matching to Si photo detector
RoHS compliance
Applications
Infrared sensor
Description
The SIRP3015X12-J5 is a GaAlAs infrared LED
housed in a miniature SMD package. The device
has a peak wavelength of 880nm LED spectrally
matched with phototransistor or photodiode.
Package Outline
Schematic
Anode
Cathode
CT Micro
Proprietary & Confidential
Page 1
Rev 0 (Preliminary)
Jun, 2016



SIRP3015X12-J5
SIRP3015X12-J5
SMD Type 880nm Infrared Emitter
Absolute Maximum Rating at 250C
Symbol
Parameters
IF Continuous Forward Current
IFP Peak Forward Current
VR Reverse Voltage
Topr Operating Temperature
Tstg Storage Temperature
Tsol Soldering Temperature
PD Power Dissipation at(or below) 25Free Air Temperature
Ratings
70
0.7
5
-40 ~ +85
-40 ~ +100
260
140
Units
mA
A
V
0C
0C
0C
mW
Notes
1
2
Electro-Optical Characteristics TA = 25°C (unless otherwise specified)
Optical Characteristics
Symbol
Parameters
Ie Radiant Intensity
λp
Δλ
θ1/2
Peak Wavelength
Spectral Bandwidth
Angle of Half Intensity
Test Conditions
IF=20mA
IF =70mA
IF=20mA
IF=20mA
IF=20mA
Min Typ Max Units Notes
2.5 5.0
- 17
-
mW/sr
-
- 880 - nm
- 30 - nm
- 42.5 -
deg
Electrical Characteristics
Symbol
Parameters
VF Forward Voltage
IR Reverse Current
Test Conditions
IF=20mA
IF=70mA
VR=5V
Notes:
1. IFP Conditions--Pulse Width100μs and Duty1%.
2. Soldering time5 seconds.
Min Typ Max Units Notes
1.20 1.35
1.30 1.47
--
1.7
2.0
10
V
μA
CT Micro
Proprietary & Confidential
Page 2
Rev 0 (Preliminary)
Jun, 2016





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