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IRP3012W24-F2

CT Micro

Infrared Emitter

IRP3012W24-F2 SMD Type 940nm Infrared Emitter Features  Small double-end package  Viewing Angle at X axis (Note3) = ...


CT Micro

IRP3012W24-F2

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Description
IRP3012W24-F2 SMD Type 940nm Infrared Emitter Features  Small double-end package  Viewing Angle at X axis (Note3) = 260  High reliability  Good spectral matching to Si photo detector  RoHS compliance Applications  Infrared sensor  Infrared Touch Panel Solutions Description The IRP3012W24-F2 is a GaAlAs infrared LED housed in a miniature SMD package. The device has a peak wavelength of 940nm LED spectrally matched with phototransistor or photodiode. Package Outline Schematic Cathode CT Micro Proprietary & Confidential Anode Page 1 Rev 0 (Preliminary) Feb, 2015 IRP3012W24-F2 SMD Type 940nm Infrared Emitter Absolute Maximum Rating at 250C Symbol Parameters IF Continuous Forward Current IFP Peak Forward Current VR Reverse Voltage Topr Operating Temperature Tstg Storage Temperature Tsol Soldering Temperature PD Power Dissipation at(or below) 25℃ Free Air Temperature RTHJA Junction to Ambient Thermal Resistance Ratings 70 0.7 5 -40 ~ +85 -40 ~ +100 260 133 540 Units mA A V 0C 0C 0C mW 0C/W Notes 1 2 Electro-Optical Characteristics TA = 25°C (unless otherwise specified) Optical Characteristics Symbol Parameters Ie Radiant Intensity λp Peak Wavelength Δλ Spectral Bandwidth θ1/2 Angle of Half Intensity (X) Angle of Half Intensity (Y) Test Conditions IF=20mA IF =70mA IF=20mA IF=20mA IF=20mA Min Typ Max Units Notes 4.0 7.0 - 24 mW/sr - - 940 - nm - 40 - nm - 26 deg 3 24 Electrical Characteristics Symbol Parameters VF Forward Voltage ...




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