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N-Channel MOSFET. CT3A01-R3 Datasheet

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N-Channel MOSFET. CT3A01-R3 Datasheet






CT3A01-R3 MOSFET. Datasheet pdf. Equivalent






CT3A01-R3 MOSFET. Datasheet pdf. Equivalent


CT3A01-R3

Part

CT3A01-R3

Description

N-Channel MOSFET



Feature


CT3A01-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Vol tage VDSS 20 V • Drain-Source On-Resi stance • RDS(ON) 55mΩ, at VGS= 4.5V , ID=3.2A RDS(ON) 65mΩ, at VGS= 2.5V, ID= 2.5A RDS(ON) 80mΩ, at VGS= 1.8V, ID= 2.0A ℃• Continuous Drain Curre nt at TA=25 ID = 3.2A • Advanced high cell density Trench Technology • RoH S Compliance & Halogen Free Descripti.
Manufacture

CT Micro

Datasheet
Download CT3A01-R3 Datasheet


CT Micro CT3A01-R3

CT3A01-R3; on The CT3A01-R3 uses high performance T rench Technology to provide excellent R DS(ON) and low gate charge which is sui table for most of the synchronous buck converter applications. Applications Power Management • Portable Equipm ent • Load switch Package Outline S chematic Drain Drain Gate Source G ate Source CT Micro Proprietary & Con fidential Page 1 Rev 4.


CT Micro CT3A01-R3

Jun, 2015 CT3A01-R3 N-Channel Enhancem ent MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Sou rce Voltage VGS Gate-Source Voltage ID Continuous Drain Current @TA=25 ID M Pulsed Drain Current ℃PD Total Powe r Dissipation @TA=25 TSTG Storage Tem perature Range TJ Operating Junction T emperature Range Thermal Characteristi cs Symbol Parameters.

Part

CT3A01-R3

Description

N-Channel MOSFET



Feature


CT3A01-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Vol tage VDSS 20 V • Drain-Source On-Resi stance • RDS(ON) 55mΩ, at VGS= 4.5V , ID=3.2A RDS(ON) 65mΩ, at VGS= 2.5V, ID= 2.5A RDS(ON) 80mΩ, at VGS= 1.8V, ID= 2.0A ℃• Continuous Drain Curre nt at TA=25 ID = 3.2A • Advanced high cell density Trench Technology • RoH S Compliance & Halogen Free Descripti.
Manufacture

CT Micro

Datasheet
Download CT3A01-R3 Datasheet




 CT3A01-R3
CT3A01-R3
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 20 V
Drain-Source On-Resistance
RDS(ON) 55m, at VGS= 4.5V, ID=3.2A
RDS(ON) 65m, at VGS= 2.5V, ID= 2.5A
RDS(ON) 80m, at VGS= 1.8V, ID= 2.0A
Continuous Drain Current at TA=25 ID = 3.2A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CT3A01-R3 uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications.
Applications
Power Management
Portable Equipment
Load switch
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 4
Jun, 2015




 CT3A01-R3
CT3A01-R3
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TA=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TA=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA
Thermal Resistance
Junction-Ambient
Test Conditions
Test Conditions
20
±8
3.2
15
1.4
-55 to 150
-55 to 150
Min Notes
V
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
-- 125 -- oC /W 1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 4
Jun, 2015



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