CT3A01-R3

CT3A01-R3 N-Channel Enhancement MOSFET Features Drain-Source Breakdown Voltage VDSS 20 V Drain-Source On-Resistance RDS(ON) 55mΩ, at VGS= 4.5V, ID=3.2A RDS(ON) 65mΩ, at VGS= 2.5V, ID= 2.5A RDS(ON) 80mΩ, at VGS= 1.8V, ID= 2.0A ℃ Continuous Drain Current at TA=25 ID = 3.2A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free Description The CT3A01-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications. Applications Power Management Portable Equipment Load switch Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 4 Jun, 2015 CT3A01-R3 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ℃ID Continuous Drain Current @TA=25 IDM Pulsed Drain Current ℃PD Total Power Dissipation @TA=25 TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient Test Conditions Test Conditions 20 ±8 3.2 15 1.4 -55 to 150 -55 to 150 Min Notes V V A1 A1 W2 °C °C Min Typ Max Units Notes -- 125 -- oC /W 1,4 CT Micro Proprietary & Confidential Page 2 Rev 4 Jun, 2015 CT3A01-R3 N-Channel Enhancement MOSFET Electrical Characteristics TA = 25°C (unless otherwise specified) Static Characteristics Symb...