P-Channel MOSFET. CTH6106PS-T52 Datasheet

CTH6106PS-T52 MOSFET. Datasheet pdf. Equivalent

Part CTH6106PS-T52
Description P-Channel MOSFET
Feature CTH6106PS-T52 P-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS -60 V  D.
Manufacture CT Micro
Datasheet
Download CTH6106PS-T52 Datasheet



CTH6106PS-T52
CTH6106PS-T52
P-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS -60 V
Drain-Source On-Resistance
RDS(ON) 14m, at VGS= -10V, IDS= -17A
RDS(ON) 16m, at VGS= -4.5V, IDS= -14A
Continuous Drain Current at TC=25ID = -61A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Applications
Load Switch
Power Management
LCD Display inverter
DC/DC Converter
Description
The CTH6106PS-T52 uses high performance
Trench Technology to provide excellent RDS(ON) and
low gate charge which is suitable for most of the
synchronous buck converter applications .
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 2
Jun, 2015



CTH6106PS-T52
CTH6106PS-T52
P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25OC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @ TC=25
IDM Pulsed Drain Current
PD Total Power Dissipation @ TC=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJC
Thermal Resistance
Junction-Case
Test Conditions
Ratings
-60
±20
-61
-240
114
-55 to 150
-55 to 150
Units
V
V
A
A
W
0C
0C
Notes
1
1
2
Min Typ Max Units Notes
- - 1.1 C0/W 1,2
CT Micro
Proprietary & Confidential
Page 2
Rev 2
Jun, 2015





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