Phototransistor. PTC93528T19 Datasheet

PTC93528T19 Phototransistor. Datasheet pdf. Equivalent

Part PTC93528T19
Description Phototransistor
Feature Features  Small double-end package  High photo sensitivity  High reliability  Spectral range of .
Manufacture CT Micro
Datasheet
Download PTC93528T19 Datasheet



PTC93528T19
Features
Small double-end package
High photo sensitivity
High reliability
Spectral range of sensitivity: 400-1100nm
Fast Response time
RoHS compliance
Applications
Infrared sensor
PTC93528T19
SMD Type Phototransistor
Description
The PTC93528T19 is silicon NPN Phototransistor
The device has wide spectral sensitivity range from
400 to 1100nm.
Package Outline
Schematic
Collector
Emitter
CT Micro
Proprietary & Confidential
Page 1
Rev 0 (Preliminary)
Jul, 2015



PTC93528T19
PTC93528T19
SMD Type Phototransistor
Absolute Maximum Rating at 250C
Symbol
Parameters
IC Collector Current
BVCEO Collector-Emitter Voltage
BVECO Emitter-Collector Voltage
Topr Operating Temperature
Tstg Storage Temperature
Tsol Soldering Temperature
Pto Total Power Dissipation
Optical Characteristics
Symbol
Parameters
Spectral Bandwidth
P Peak Sensitivity
θ1/2 View Angle
Test Conditions
-
-
VCE=5V
Electrical Characteristics
Symbol
Parameters
ICEO Dark Current
VCE(sat)
Collector-Emitter
Saturation Voltage
IC Collector Light Current
CT Terminal Capacitance
Test Conditions
Ee=0mW /cm2
VCE=20V
Ee=1mW /cm2
IC=1.0mA
Ee=1mW /cm2
P=940nm, VCE=5V
Ee=0mW /cm2
f=1MHz ,VCE=5V
Ratings
20
35
5
-40 ~ +85
-40 ~ +100
260
150
Units
mA
V
V
0C
0C
0C
mW
Notes
1
2
3
Min Typ Max Units Notes
400 - 1100 nm
- 940 - nm
- 50 - deg
Min Typ Max Units Notes
- - 100 nA
- - 0.4 V
1.4 1.9 - mA
- 4.4 - pF
CT Micro
Proprietary & Confidential
Page 2
Rev 0 (Preliminary)
Jul, 2015





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