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P-Channel MOSFET. CT2323-R3 Datasheet

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P-Channel MOSFET. CT2323-R3 Datasheet






CT2323-R3 MOSFET. Datasheet pdf. Equivalent




CT2323-R3 MOSFET. Datasheet pdf. Equivalent





Part

CT2323-R3

Description

P-Channel MOSFET



Feature


CT2323-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Vol tage VDSS - 20 V • Drain-Source On-Re sistance RDS(ON) 30mΩ, at VGS= - 4.5V , IDS= - 4.7A RDS(ON) 35mΩ, at VGS= - 2.5V, IDS= - 4.1A RDS(ON) 40mΩ, at V GS= - 1.8V, IDS= - 2.0A ℃• Continuo us Drain Current at TA=25 ID = - 4.2A Advanced high cell density Trench Te chnology • RoHS Compliance & Halog.
Manufacture

CT Micro

Datasheet
Download CT2323-R3 Datasheet


CT Micro CT2323-R3

CT2323-R3; en Free Applications • Power Managemen t • Portable Equipment • Battery Po wered System • DC/DC Converter Packag e Outline Description The CT2323-R3 us es high performance Trench Technology t o provide excellent RDS(ON) and low gat e charge which is suitable for most of the synchronous buck converter applicat ions . Schematic Drain Drain Gate S ource Gate Source CT Mi.


CT Micro CT2323-R3

cro Proprietary & Confidential Page 1 Rev 4 Jun, 2015 CT2323-R3 P-Channel En hancement MOSFET Absolute Maximum Rati ng at 25oC Symbol Parameters VDS Dra in-Source Voltage VGS Gate-Source Volt age ℃ID Continuous Drain Current @TA= 25 IDM Pulsed Drain Current ℃PD Tota l Power Dissipation @TA=25 TSTG Stora ge Temperature Range TJ Operating Junc tion Temperature Range.


CT Micro CT2323-R3

Thermal Characteristics Symbol Param eters RӨJA Thermal Resistance Juncti on-Ambient (t=10s) Test Conditions Ra tings -20 ±8 -4.7 -6.8 1.35 -55 to 150 -55 to 150 Units V V A A W oC oC Not es 1 1 2 Min Typ Max Units Notes - 2 00 - oC /W 1,4 CT Micro Proprietary & Confidential Page 2 Rev 4 Jun, 201 5 CT2323-R3 P-Channel Enhancement MOSF ET Electrical Chara.

Part

CT2323-R3

Description

P-Channel MOSFET



Feature


CT2323-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Vol tage VDSS - 20 V • Drain-Source On-Re sistance RDS(ON) 30mΩ, at VGS= - 4.5V , IDS= - 4.7A RDS(ON) 35mΩ, at VGS= - 2.5V, IDS= - 4.1A RDS(ON) 40mΩ, at V GS= - 1.8V, IDS= - 2.0A ℃• Continuo us Drain Current at TA=25 ID = - 4.2A Advanced high cell density Trench Te chnology • RoHS Compliance & Halog.
Manufacture

CT Micro

Datasheet
Download CT2323-R3 Datasheet




 CT2323-R3
CT2323-R3
P-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS - 20 V
Drain-Source On-Resistance
RDS(ON) 30m, at VGS= - 4.5V, IDS= - 4.7A
RDS(ON) 35m, at VGS= - 2.5V, IDS= - 4.1A
RDS(ON) 40m, at VGS= - 1.8V, IDS= - 2.0A
Continuous Drain Current at TA=25 ID = - 4.2A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Applications
Power Management
Portable Equipment
Battery Powered System
DC/DC Converter
Package Outline
Description
The CT2323-R3 uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications .
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 4
Jun, 2015




 CT2323-R3
CT2323-R3
P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TA=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TA=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Ratings
-20
±8
-4.7
-6.8
1.35
-55 to 150
-55 to 150
Units
V
V
A
A
W
oC
oC
Notes
1
1
2
Min Typ Max Units Notes
-
200
-
oC /W
1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 4
Jun, 2015




 CT2323-R3
CT2323-R3
P-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
BVDSS Drain-Source Breakdown Voltage
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Test Conditions
VGS=0V, ID= -250µA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
Min Typ Max Units Notes
-20 - - V
- - -1 µA
-
-
±100
nA
On Characteristics
Symbol
Parameters
RDS(ON)
Drain-Source On-Resistance
VGS(TH) Gate-Source Threshold Voltage
Test Conditions
VGS = -4.5V, ID = -4.7A
VGS = -2.5V, ID = -4.1A
VGS = -1.8V, ID = -2.0A
VGS = VDS, ID = -250µA
Min Typ Max Units Notes
- 30 39 m
- 35 52 m Fig 4
- 45 68 m
-0.4 - -1.0 V Fig 5
Dynamic Characteristics
Symbol
Parameters
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Test Conditions
VDS = -15V ,
VGS = 0V,
f=1MHz
Min Typ Max Units Notes
- 1773 -
- 178 -
pF Fig 3
- 140 -
Switching Characteristics
Symbol
Parameters
TD(ON)
Turn-On Delay Time
TR Rise Time
TD(OFF)
Turn-Off Delay Time
TF Fall Time
QG Total Gate Charge
QGS Gate-Source Charge
QGD
Gate-Drain (Miller) Charge
Test Conditions
VDS = -15V,
VGS = -10V,
RG = 6,
ID = -1.0A
VDS = -15V , .
VGS = -10V,
ID = -4.2A
Min Typ Max Units Notes
- 4.75 -
- 21 -
Fig
ns
- 39 -
11 & 12
- 20.5
- 21 -
Fig
- 2.8 - nC
9 & 10
- 4.1 -
CT Micro
Proprietary & Confidential
Page 3
Rev 4
Jun, 2015



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