CT2323-R3

CT2323-R3 P-Channel Enhancement MOSFET Features Drain-Source Breakdown Voltage VDSS - 20 V Drain-Source On-Resistance RDS(ON) 30mΩ, at VGS= - 4.5V, IDS= - 4.7A RDS(ON) 35mΩ, at VGS= - 2.5V, IDS= - 4.1A RDS(ON) 40mΩ, at VGS= - 1.8V, IDS= - 2.0A ℃ Continuous Drain Current at TA=25 ID = - 4.2A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free Applications Power Management Portable Equipment Battery Powered System DC/DC Converter Package Outline Description The CT2323-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 4 Jun, 2015 CT2323-R3 P-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ℃ID Continuous Drain Current @TA=25 IDM Pulsed Drain Current ℃PD Total Power Dissipation @TA=25 TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient (t=10s) Test Conditions Ratings -20 ±8 -4.7 -6.8 1.35 -55 to 150 -55 to 150 Units V V A A W oC oC Notes 1 1 2 Min Typ Max Units Notes - 200 - oC /W 1,4 CT Micro Proprietary & Confidential Page 2 Rev 4 Jun, 2015 CT2323-R3 P-Channel Enhancement MOSFET Electrical Characteristics TA = 25°C...