P-Channel MOSFET. CT2323-R3 Datasheet

CT2323-R3 MOSFET. Datasheet pdf. Equivalent

Part CT2323-R3
Description P-Channel MOSFET
Feature CT2323-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS - 20 V • Drai.
Manufacture CT Micro
Total Page 12 Pages
Datasheet
Download CT2323-R3 Datasheet



CT2323-R3
CT2323-R3
P-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS - 20 V
Drain-Source On-Resistance
RDS(ON) 30m, at VGS= - 4.5V, IDS= - 4.7A
RDS(ON) 35m, at VGS= - 2.5V, IDS= - 4.1A
RDS(ON) 40m, at VGS= - 1.8V, IDS= - 2.0A
Continuous Drain Current at TA=25 ID = - 4.2A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Applications
Power Management
Portable Equipment
Battery Powered System
DC/DC Converter
Package Outline
Description
The CT2323-R3 uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications .
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 4
Jun, 2015



CT2323-R3
CT2323-R3
P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TA=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TA=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Ratings
-20
±8
-4.7
-6.8
1.35
-55 to 150
-55 to 150
Units
V
V
A
A
W
oC
oC
Notes
1
1
2
Min Typ Max Units Notes
-
200
-
oC /W
1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 4
Jun, 2015





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