Phototransistor Optocoupler. CNY17-4 Datasheet

CNY17-4 Optocoupler. Datasheet pdf. Equivalent

Part CNY17-4
Description Phototransistor Optocoupler
Feature CNY17-1, CNY17-2, CNY17-3, CNY17-4 CNY17F-1, CNY17F-2, CNY17F-3, CNY17F-4 DC Input 6-Pin Phototransi.
Manufacture CT Micro
Datasheet
Download CNY17-4 Datasheet



CNY17-4
CNY17-1, CNY17-2, CNY17-3, CNY17-4
CNY17F-1, CNY17F-2, CNY17F-3, CNY17F-4
DC Input 6-Pin Phototransistor Optocoupler
Features
High isolation 5000 VRMS
CTR flexibility available see order information
DC input with transistor output
Operating temperature range - 55 °C to 110 °C
Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC – GB4943.1, GB8898
IEC60065, IEC60950
Applications
Switch mode power supplies
Computer peripheral interface
Microprocessor system interface
Description
The CNY17 and CNY17F series consists of a photo
transistor optically coupled to a gallium arsenide
Infrared-emitting diode in a 6-lead DIP package with
different lead forming options.
Package Outline
Schematic
Note: Different lead forming options available. See package
dimension.
Note: CNY17F without Base Connection
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Feb, 2014



CNY17-4
CNY17-1, CNY17-2, CNY17-3, CNY17-4
CNY17F-1, CNY17F-2, CNY17F-3, CNY17F-4
DC Input 6-Pin Phototransistor Optocoupler
Absolute Maximum Rating at 25oC
Symbol
Parameters
VISO Isolation voltage
TOPR Operating temperature
TSTG Storage temperature
TSOL Soldering temperature
Emitter
IF Forward current
IF(TRANS) Peak transient current (1µs P.W,300pps)
VR Reverse voltage
PD Power dissipation
Detector
PD Power dissipation
BVCEO Collector-Emitter Breakdown Voltage
BVCBO Collector-Base Breakdown Voltage
BVECO Emitter-Collector Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
Ratings
5000
-55 ~ +110
-55 ~ +150
260
60
1
6
100
150
80
80
7
7
Units
VRMS
oC
oC
oC
Notes
mA
A
V
mW
mW
V
V
V
V
CT Micro
Proprietary & Confidential
Page 2
Rev 1
Feb, 2014





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