N-Channel MOSFET. CTL0452NS Datasheet

CTL0452NS MOSFET. Datasheet pdf. Equivalent

Part CTL0452NS
Description N-Channel MOSFET
Feature CTL0452NS N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 20 V  Drain-.
Manufacture CT Micro
Datasheet
Download CTL0452NS Datasheet



CTL0452NS
CTL0452NS
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 20 V
Drain-Source On-Resistance
RDS(ON) 22m, at VGS= 4.5V, IDS= 4.5A
RDS(ON) 27m, at VGS= 2.5V, IDS= 4.0A
Continuous Drain Current at TC=25ID = 4.5A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Applications
Power Management
Lithium Ion Battery
Description
The CTL0452NS uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications .
Package Outline
Pin 2
Pin 1
Pin 3
Schematic
Drain
GATE
Source
Gate:
Drain:
Source:
Pin 1
Pin2
Pin3
CT Micro
Proprietary & Confidential
Page 1
Rev 1
May, 2013



CTL0452NS
CTL0452NS
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current
PD Total Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Ratings
20
±8
4.5
13.5
1.25
-55 to 150
-55 to 150
Units
V
V
A
A
W
oC
oC
Notes
1
1
2
Min Typ Max Units Notes
-
175
-
oC /W
1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 1
May, 2013





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