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P-Channel MOSFET. CTL0015PS-R3 Datasheet

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P-Channel MOSFET. CTL0015PS-R3 Datasheet






CTL0015PS-R3 MOSFET. Datasheet pdf. Equivalent




CTL0015PS-R3 MOSFET. Datasheet pdf. Equivalent





Part

CTL0015PS-R3

Description

P-Channel MOSFET



Feature


CTL0015PS-R3 P-Channel Enhancement MOSFE T Features Drain-Source Breakdown Vol tage VDSS -50 V Drain-Source On-Resist ance RDS(ON) 5, at VGS= -5.0V, ID= - 0.1A Continuous Drain Current at TC=25 ℃ID = -0.13A Advanced high cell dens ity Trench Technology RoHS Compliance & Halogen Free Description The CTL0015 PS-R3 uses high performance Trench Tech nology to provide exce.
Manufacture

CT Micro

Datasheet
Download CTL0015PS-R3 Datasheet


CT Micro CTL0015PS-R3

CTL0015PS-R3; llent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications. Applicat ions DC to DC Converter Load switchin g Battery Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 1 Nov, 2013 CTL0015PS-R3 P -Channel Enhancement MOSFET Absolute M aximum Rating at 2.


CT Micro CTL0015PS-R3

5oC Symbol Parameters VDS Drain-Sourc e Voltage VGS Gate-Source Voltage ID Continuous Drain Current IDM Pulsed Dr ain Current PD Total Power Dissipation TSTG Storage Temperature Range TJ O perating Junction Temperature Range Th ermal Characteristics Symbol Paramete rs RӨJA4 Thermal Resistance Junction -Ambient (t=10s) Test Conditions Test Conditions -50 ±20.


CT Micro CTL0015PS-R3

-0.13 -0.52 0.225 -55 to 150 -55 to 150 Min Notes V V A1 A1 W2 °C °C Min T yp Max Units Notes -- 175 -- oC /W 1,4 CT Micro Proprietary & Confidential P age 2 Rev 1 Nov, 2013 CTL0015PS-R3 P- Channel Enhancement MOSFET Electrical Characteristics TA = 25°C (unless othe rwise specified) Static Characteristic s Symbol Parameters BVDSS Drain-Sour ce Breakdown Voltage .

Part

CTL0015PS-R3

Description

P-Channel MOSFET



Feature


CTL0015PS-R3 P-Channel Enhancement MOSFE T Features Drain-Source Breakdown Vol tage VDSS -50 V Drain-Source On-Resist ance RDS(ON) 5, at VGS= -5.0V, ID= - 0.1A Continuous Drain Current at TC=25 ℃ID = -0.13A Advanced high cell dens ity Trench Technology RoHS Compliance & Halogen Free Description The CTL0015 PS-R3 uses high performance Trench Tech nology to provide exce.
Manufacture

CT Micro

Datasheet
Download CTL0015PS-R3 Datasheet




 CTL0015PS-R3
CTL0015PS-R3
P-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS -50 V
Drain-Source On-Resistance
RDS(ON) 5, at VGS= -5.0V, ID= -0.1A
Continuous Drain Current at TC=25ID = -0.13A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CTL0015PS-R3 uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications.
Applications
DC to DC Converter
Load switching
Battery
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Nov, 2013




 CTL0015PS-R3
CTL0015PS-R3
P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current
PD Total Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA4
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Test Conditions
-50
±20
-0.13
-0.52
0.225
-55 to 150
-55 to 150
Min Notes
V
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
-- 175 -- oC /W 1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 1
Nov, 2013




 CTL0015PS-R3
CTL0015PS-R3
P-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
BVDSS Drain-Source Breakdown Voltage
IDSS Drain-Source Leakage Current
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Test Conditions
VGS= 0V, ID= -250μA
VDS = -25V, VGS = 0V
VDS = -50V, VGS = 0V
VGS = ±20V, VDS = 0V
Min Typ Max Units Notes
-50 - - V
- - -0.1 µ A
15 µ A
- - ±60µ A
On Characteristics
Symbol
Parameters
RDS(ON)
Drain-Source On-Resistance
VGS(th)
Gate-Source Threshold Voltage
Test Conditions
Min Typ Max Units Notes
VGS = -5.0V, ID = -100mA
-
5.0 10
3
VGS = VDS, I ID =-250μA -0.8 --- -2.0 V
3
Dynamic Characteristics
Symbol
Parameters
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Test Conditions
VGS =0V,
VDVSD=S-=1-05VV,
f=1MHz
Min Typ Max Units Notes
- 29 -
- 11 - pF
- 4.8 -
Switching Characteristics
Symbol
Parameters
TD(ON)
Turn-On Delay Time
TR Rise Time
TD(OFF)
Turn-Off Delay Time
TF Fall Time
QG Total Gate Charge
f=1MHz
Test Conditions
VDS = -15V ,
RG = 15,
ID =-2.5A
VDS = -15V ,
Min Typ Max Units Notes
- 2.5 -
- 1.0 -
- 16 -
ns
- 8.0 -
- 0.6 - nC
CT Micro
Proprietary & Confidential
Page 3
Rev 1
Nov, 2013



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