P-Channel MOSFET. CTL0015PS-R3 Datasheet

CTL0015PS-R3 MOSFET. Datasheet pdf. Equivalent

Part CTL0015PS-R3
Description P-Channel MOSFET
Feature CTL0015PS-R3 P-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS -50 V  Dr.
Manufacture CT Micro
Datasheet
Download CTL0015PS-R3 Datasheet



CTL0015PS-R3
CTL0015PS-R3
P-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS -50 V
Drain-Source On-Resistance
RDS(ON) 5, at VGS= -5.0V, ID= -0.1A
Continuous Drain Current at TC=25ID = -0.13A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CTL0015PS-R3 uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications.
Applications
DC to DC Converter
Load switching
Battery
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Nov, 2013



CTL0015PS-R3
CTL0015PS-R3
P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current
PD Total Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA4
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Test Conditions
-50
±20
-0.13
-0.52
0.225
-55 to 150
-55 to 150
Min Notes
V
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
-- 175 -- oC /W 1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 1
Nov, 2013





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