N-Channel MOSFET. CTL0383NS-R3 Datasheet

CTL0383NS-R3 MOSFET. Datasheet pdf. Equivalent

Part CTL0383NS-R3
Description N-Channel MOSFET
Feature CTL0383NS-R3 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 30 V  Dra.
Manufacture CT Micro
Total Page 12 Pages
Datasheet
Download CTL0383NS-R3 Datasheet



CTL0383NS-R3
CTL0383NS-R3
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 30 V
Drain-Source On-Resistance
RDS(ON) 48m, at VGS= 10V, ID= 3.4A
RDS(ON) 54m, at VGS= 4.5V, ID= 2.7A
RDS(ON) 75m, at VGS= 2.5V, ID= 1.0A
Continuous Drain Current at TC=25ID = 3.8A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CTL0383NS-R3 is the N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low
voltage application such as cellular phone and notebook
computer power management and other battery powered
circuits where low in-line power loss are needed in a very
small outline surface mount package.
Applications
Power Management
Lithium Ion Battery
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Nov, 2013



CTL0383NS-R3
CTL0383NS-R3
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current
PD Total Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA4
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Test Conditions
30
±12
3.8
15
1.4
-55 to 150
-55 to 150
Min Notes
V
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
-- 90 -- oC /W 1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 1
Nov, 2013





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