CTL0412ND

CTL0412ND N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 20 V  Drain-Source On-Resistance RDS(ON) 22m, at VGS= 4.5V, ID= 4.1A RDS(ON) 27m, at VGS= 2.5V, ID= 3.8A  Continuous Drain Current at TC=25℃ID = 4.1A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTL0412ND uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications tions. Applications  Power Management  Lithium Ion Battery Package Outline Schematic Pin 1 Pin 2 Gate 1 Source 2 Gate 2 Drain 1 Source 1 Drain 2 CT Micro Proprietary & Confidential Page 1 Rev 1 Aug, 2013 CTL0412ND N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current IDM Pulsed Drain Current PD Total Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient Test Conditions Test Conditions 20 ±8 4.1 12 1.25 -55 to 150 -55 to 150 Min Notes V V A1 A1 W2 °C °C Min Typ Max Units Notes -- 150 -- oC /W 1,4 CT Micro Proprietary & Confidential Page 2 Rev 1 Aug, 2013 CTL0412ND N-Channel Enhancement MOSFET Electrical Characteristics TA = 25°C (unless otherwise specified) Static Characteristics Symbol Parameters BVDSS Drain-Source ...