N-Channel MOSFET. CTL0412ND Datasheet

CTL0412ND MOSFET. Datasheet pdf. Equivalent

Part CTL0412ND
Description N-Channel MOSFET
Feature CTL0412ND N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 20 V  Drain-.
Manufacture CT Micro
Datasheet
Download CTL0412ND Datasheet



CTL0412ND
CTL0412ND
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 20 V
Drain-Source On-Resistance
RDS(ON) 22m, at VGS= 4.5V, ID= 4.1A
RDS(ON) 27m, at VGS= 2.5V, ID= 3.8A
Continuous Drain Current at TC=25ID = 4.1A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CTL0412ND uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications tions.
Applications
Power Management
Lithium Ion Battery
Package Outline
Schematic
Pin 1
Pin 2
Gate 1
Source 2
Gate 2
Drain 1
Source 1
Drain 2
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Aug, 2013



CTL0412ND
CTL0412ND
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current
PD Total Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA
Thermal Resistance
Junction-Ambient
Test Conditions
Test Conditions
20
±8
4.1
12
1.25
-55 to 150
-55 to 150
Min Notes
V
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
-- 150 -- oC /W 1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 1
Aug, 2013





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