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N-Channel MOSFET. CTL0502NS Datasheet

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N-Channel MOSFET. CTL0502NS Datasheet






CTL0502NS MOSFET. Datasheet pdf. Equivalent




CTL0502NS MOSFET. Datasheet pdf. Equivalent





Part

CTL0502NS

Description

N-Channel MOSFET



Feature


CTL0502NS N-Channel Enhancement MOSFET Features Drain-Source Breakdown Voltag e VDSS 20 V Drain-Source On-Resistance RDS(ON) 21m, at VGS= 4.5V, ID= 5.0A RDS(ON) 24m, at VGS= 2.5V, ID= 3.5A RDS(ON) 31m, at VGS= 1.8V, ID= 2.8A Continuous Drain Current at TC=25℃I D = 5.0A Advanced high cell density Tr ench Technology RoHS Compliance & Halo gen Free Description The .
Manufacture

CT Micro

Datasheet
Download CTL0502NS Datasheet


CT Micro CTL0502NS

CTL0502NS; CTL0502NS uses high performance Trench T echnology to provide excellent RDS(ON) and low gate charge which is suitable f or most of the synchronous buck convert er applications. Applications Power M anagement Lithium Ion Battery Package Outline Pin 2 Schematic Drain Pin 1 Pin 3 CT Micro Proprietary & Confiden tial Gate Gate: Drain: Source: Sourc e Pin 1 Pin 2 Pin .


CT Micro CTL0502NS

3 Page 1 Rev 1 Aug, 2013 CTL0502NS N- Channel Enhancement MOSFET Absolute Ma ximum Rating at 25oC Symbol Parameter s VDS Drain-Source Voltage VGS Gate-S ource Voltage ID Continuous Drain Curr ent IDM Pulsed Drain Current PD Total Power Dissipation TSTG Storage Tempe rature Range TJ Operating Junction Tem perature Range Thermal Characteristics Symbol Paramete.


CT Micro CTL0502NS

rs RӨJA4 Thermal Resistance Junction- Ambient (t=10s) Test Conditions Test Conditions 20 ±12 5.0 25 1.4 -55 to 15 0 -55 to 150 Min Notes V V A1 A1 W2 ° C °C Min Typ Max Units Notes -- 175 - - oC /W 1,4 CT Micro Proprietary & Con fidential Page 2 Rev 1 Aug, 2013 CTL 0502NS N-Channel Enhancement MOSFET El ectrical Characteristics TA = 25°C (un less otherwise specifie.

Part

CTL0502NS

Description

N-Channel MOSFET



Feature


CTL0502NS N-Channel Enhancement MOSFET Features Drain-Source Breakdown Voltag e VDSS 20 V Drain-Source On-Resistance RDS(ON) 21m, at VGS= 4.5V, ID= 5.0A RDS(ON) 24m, at VGS= 2.5V, ID= 3.5A RDS(ON) 31m, at VGS= 1.8V, ID= 2.8A Continuous Drain Current at TC=25℃I D = 5.0A Advanced high cell density Tr ench Technology RoHS Compliance & Halo gen Free Description The .
Manufacture

CT Micro

Datasheet
Download CTL0502NS Datasheet




 CTL0502NS
CTL0502NS
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 20 V
Drain-Source On-Resistance
RDS(ON) 21m, at VGS= 4.5V, ID= 5.0A
RDS(ON) 24m, at VGS= 2.5V, ID= 3.5A
RDS(ON) 31m, at VGS= 1.8V, ID= 2.8A
Continuous Drain Current at TC=25ID = 5.0A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CTL0502NS uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications.
Applications
Power Management
Lithium Ion Battery
Package Outline
Pin 2
Schematic
Drain
Pin 1
Pin 3
CT Micro
Proprietary & Confidential
Gate
Gate:
Drain:
Source:
Source
Pin 1
Pin 2
Pin 3
Page 1
Rev 1
Aug, 2013




 CTL0502NS
CTL0502NS
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current
PD Total Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA4
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Test Conditions
20
±12
5.0
25
1.4
-55 to 150
-55 to 150
Min Notes
V
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
-- 175 -- oC /W 1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 1
Aug, 2013




 CTL0502NS
CTL0502NS
N-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
BVDSS Drain-Source Breakdown Voltage
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Test Conditions
VGS= 0V, ID= 250μA
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
Min Typ Max Units Notes
20 - - V
--
1 µA
-
-
100
nA
On Characteristics
Symbol
Parameters
RDS(ON)
Drain-Source On-Resistance
VGS(th)
Gate-Source Threshold Voltage
Test Conditions
VGS = 4.5V, ID = 3.0A
VGS = 2.5V, ID = 2.6A
VGS = 1.8V, ID = 1.0A
VGS = VDS, I ID =250μA
Min Typ Max Units Notes
- 21 31 mΩ
- 24 37 mΩ 3
- 31 47 mΩ
0.7 --- 1.4 V
3
Dynamic Characteristics
Symbol
Parameters
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Test Conditions
VGS =0V,
VDVDSS=-=1100VV,
f=1MHz
Min Typ Max Units Notes
- 668 -
- 118 -
pF
- 86 -
Switching Characteristics
Symbol
Parameters
TD(ON)
Turn-On Delay Time
TR Rise Time
TD(OFF)
Turn-Off Delay Time
TF Fall Time
QG Total Gate Charge
QGS Gate-Source Charge
QGD
Gate-Drain Charge
f=1MHz
Test Conditions
VDS = 5V ,
VGS = 4.5V,
RG = 6Ω,
ID =3.6A
VDS = 10V ,
VGS = 4.5V,
ID = 3.6A
Min Typ Max Units Notes
- 10.5 21
- 5 10
ns
- 29.5 59
- 4.5 9
- 7.0 -
- 1.0 - nC
- 1.5 -
CT Micro
Proprietary & Confidential
Page 3
Rev 1
Aug, 2013



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