N-Channel MOSFET. CTL0502NS Datasheet

CTL0502NS MOSFET. Datasheet pdf. Equivalent

Part CTL0502NS
Description N-Channel MOSFET
Feature CTL0502NS N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 20 V  Drain-.
Manufacture CT Micro
Total Page 11 Pages
Datasheet
Download CTL0502NS Datasheet



CTL0502NS
CTL0502NS
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 20 V
Drain-Source On-Resistance
RDS(ON) 21m, at VGS= 4.5V, ID= 5.0A
RDS(ON) 24m, at VGS= 2.5V, ID= 3.5A
RDS(ON) 31m, at VGS= 1.8V, ID= 2.8A
Continuous Drain Current at TC=25ID = 5.0A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CTL0502NS uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications.
Applications
Power Management
Lithium Ion Battery
Package Outline
Pin 2
Schematic
Drain
Pin 1
Pin 3
CT Micro
Proprietary & Confidential
Gate
Gate:
Drain:
Source:
Source
Pin 1
Pin 2
Pin 3
Page 1
Rev 1
Aug, 2013



CTL0502NS
CTL0502NS
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current
PD Total Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA4
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Test Conditions
20
±12
5.0
25
1.4
-55 to 150
-55 to 150
Min Notes
V
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
-- 175 -- oC /W 1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 1
Aug, 2013





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)