CTL1103NS

CTL1103NS N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 30 V  Drain-Source On-Resistance RDS(ON) 8.5m, at VGS= 10V, IDS= 5.5A RDS(ON) 12m, at VGS= 4.5V, IDS= 5.5A  Continuous Drain Current at TC=25℃ ID = 11A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Applications  Power Management  Lithium Ion Battery Description The CTL1103NS uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Package Outline Schematic Pin 1 Source: Gate: Drain: 1, 2, 3 4 5, 6, 7, 8 CT Micro Proprietary & Confidential Page 1 Rev 1 May, 2013 CTL1103NS N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current IDM Pulsed Drain Current PD Total Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient (t=10s) Test Conditions Ratings 30 ±20 11 40 1.6 -55 to 150 -55 to 150 Units V V A A W oC oC Notes 1 1 2 Min Typ Max Units Notes - 65 - oC /W 1,4 CT Micro Proprietary & Confidential Page 2 Rev 1 May, 2013 CTL1103NS N-Channel Enhancement MOSFET Electrical Characteristics Tc = 25°C (unless otherwise specified) Static Characteristics Symbol Parameters BVDSS Drain-Source Breakdown Vol...