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P-Channel MOSFET. CTL0212PS-R3 Datasheet

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P-Channel MOSFET. CTL0212PS-R3 Datasheet






CTL0212PS-R3 MOSFET. Datasheet pdf. Equivalent




CTL0212PS-R3 MOSFET. Datasheet pdf. Equivalent





Part

CTL0212PS-R3

Description

P-Channel MOSFET



Feature


CTL0212PS-R3 P-Channel Enhancement MOSFE T Features Drain-Source Breakdown Vol tage VDSS -20 V Drain-Source On-Resist ance RDS(ON) 130m, at VGS= -4.5V, ID = -1.0A RDS(ON) 140m, at VGS= -2.5V, ID= -0.5A Continuous Drain Current at TC=25℃ID = -2.1A Advanced high cell density Trench Technology RoHS Compli ance & Halogen Free Applications Power Management Lithium Ion.
Manufacture

CT Micro

Datasheet
Download CTL0212PS-R3 Datasheet


CT Micro CTL0212PS-R3

CTL0212PS-R3; Battery Description The CTL0212PS-R3 i s the P-Channel logic enhancement mode power field effect transistors are prod uced using high cell density, DMOS tren ch technology. This high density proces s is especially tailored to minimize on -state resistance. These devices are pa rticularly suited for low voltage appli cation such as cellular phone and noteb ook computer power.


CT Micro CTL0212PS-R3

management and other battery powered ci rcuits ,and low in-line power loss are needed in a very small outline surface mount package. Package Outline Schema tic Drain Gate Source Drain Gate So urce CT Micro Proprietary & Confidenti al Page 1 Rev 1 Nov, 2013 CTL0212PS- R3 P-Channel Enhancement MOSFET Absolu te Maximum Rating at 25oC Symbol Para meters VDS Drain-.


CT Micro CTL0212PS-R3

Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current IDM Pulse d Drain Current PD Total Power Dissipa tion TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Para meters RӨJA4 Thermal Resistance Junc tion-Ambient (t=10s) Test Conditions Test Conditions -20 ±8 -2.1 -9 1.3 -55 to 150 -55 to 150 .

Part

CTL0212PS-R3

Description

P-Channel MOSFET



Feature


CTL0212PS-R3 P-Channel Enhancement MOSFE T Features Drain-Source Breakdown Vol tage VDSS -20 V Drain-Source On-Resist ance RDS(ON) 130m, at VGS= -4.5V, ID = -1.0A RDS(ON) 140m, at VGS= -2.5V, ID= -0.5A Continuous Drain Current at TC=25℃ID = -2.1A Advanced high cell density Trench Technology RoHS Compli ance & Halogen Free Applications Power Management Lithium Ion.
Manufacture

CT Micro

Datasheet
Download CTL0212PS-R3 Datasheet




 CTL0212PS-R3
CTL0212PS-R3
P-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS -20 V
Drain-Source On-Resistance
RDS(ON) 130m, at VGS= -4.5V, ID= -1.0A
RDS(ON) 140m, at VGS= -2.5V, ID= -0.5A
Continuous Drain Current at TC=25ID = -2.1A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Applications
Power Management
Lithium Ion Battery
Description
The CTL0212PS-R3 is the P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low
voltage application such as cellular phone and notebook
computer power management and other battery powered
circuits ,and low in-line power loss are needed in a very
small outline surface mount package.
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Nov, 2013




 CTL0212PS-R3
CTL0212PS-R3
P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current
PD Total Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA4
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Test Conditions
-20
±8
-2.1
-9
1.3
-55 to 150
-55 to 150
Min Notes
V
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
-- 100 -- oC /W 1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 1
Nov, 2013




 CTL0212PS-R3
CTL0212PS-R3
P-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
BVDSS Drain-Source Breakdown Voltage
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Test Conditions
VGS= 0V, ID= -250μA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
Min Typ Max Units Notes
-20 - - V
- - -1 µ A
-
-
±100
nA
On Characteristics
Symbol
Parameters
RDS(ON)
Drain-Source On-Resistance
VGS(th)
Gate-Source Threshold Voltage
Test Conditions
VGS = -4.5V, ID = -1.0A
VGS = -2.5V, ID = -0.5A
VGS = VDS, I ID =-250μA
Min Typ Max Units Notes
- 130 170 mΩ
3
- 140 195 mΩ
-0.4 --- -1.0 V
3
Dynamic Characteristics
Symbol
Parameters
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Test Conditions
VGS =0V,
VVDDSS==--1105VV,
f=1MHz
Min Typ Max Units Notes
- 516 -
- 52 - pF
- 16 -
Switching Characteristics
Symbol
Parameters
TD(ON)
Turn-On Delay Time
TR Rise Time
TD(OFF)
Turn-Off Delay Time
TF Fall Time
QG Total Gate Charge
QGS Gate-Source Charge
QGD
Gate-Drain Charge
f=1MHz
Test Conditions
VDS = -6V ,
VGS = -4.5V,
RG = 6Ω,
RL= 6Ω,
VDS = -6V ,
VGS = -4.5V,
ID = -2A
Min Typ Max Units Notes
- 51 -
- 30 -
ns
- 49 -
- 10 -
-6-
- 1.8 - nC
-1-
CT Micro
Proprietary & Confidential
Page 3
Rev 1
Nov, 2013



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