DatasheetsPDF.com

N-Channel MOSFET. CTH2503NS-T52 Datasheet

DatasheetsPDF.com

N-Channel MOSFET. CTH2503NS-T52 Datasheet






CTH2503NS-T52 MOSFET. Datasheet pdf. Equivalent






CTH2503NS-T52 MOSFET. Datasheet pdf. Equivalent


CTH2503NS-T52

Part

CTH2503NS-T52

Description

N-Channel MOSFET



Feature


CTH2503NS-T52 N-Channel Enhancement MOSF ET Features Drain-Source Breakdown Vo ltage VDSS 30V Drain-Source On-Resista nce RDS(ON) 21m, at VGS= 10V, ID= 10 A RDS(ON) 32m, at VGS= 4.5V, ID= 7A Continuous Drain Current at TC=25℃, ID =25A Advanced high cell density Tre nch Technology RoHS Compliance & Halog en Free Description The CTH2503NS-T52 is the N-Channel logic e.
Manufacture

CT Micro

Datasheet
Download CTH2503NS-T52 Datasheet


CT Micro CTH2503NS-T52

CTH2503NS-T52; nhancement mode power field effect trans istors are produced using high cell den sity, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for lo w voltage application. Applications P ower Management Portable Equipment DC /DC Converter Load Switch Package Out line Schematic D.


CT Micro CTH2503NS-T52

rain Gate Source Drain Gate Source C T Micro Proprietary & Confidential Pag e 1 Rev 3 Jun, 2015 CTH2503NS-T52 N-C hannel Enhancement MOSFET Absolute Max imum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-So urce Voltage ID Continuous Drain Curre nt @TC=25℃ IDM Pulsed Drain Current PD Total Power Dissipation @TC=25℃ TSTG Storage Temperat.

Part

CTH2503NS-T52

Description

N-Channel MOSFET



Feature


CTH2503NS-T52 N-Channel Enhancement MOSF ET Features Drain-Source Breakdown Vo ltage VDSS 30V Drain-Source On-Resista nce RDS(ON) 21m, at VGS= 10V, ID= 10 A RDS(ON) 32m, at VGS= 4.5V, ID= 7A Continuous Drain Current at TC=25℃, ID =25A Advanced high cell density Tre nch Technology RoHS Compliance & Halog en Free Description The CTH2503NS-T52 is the N-Channel logic e.
Manufacture

CT Micro

Datasheet
Download CTH2503NS-T52 Datasheet




 CTH2503NS-T52
CTH2503NS-T52
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 30V
Drain-Source On-Resistance
RDS(ON) 21m, at VGS= 10V, ID= 10A
RDS(ON) 32m, at VGS= 4.5V, ID= 7A
Continuous Drain Current at TC=25, ID =25A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CTH2503NS-T52 is the N-Channel logic
enhancement mode power field effect transistors
are produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance. These
devices are particularly suited for low voltage
application.
Applications
Power Management
Portable Equipment
DC/DC Converter
Load Switch
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Jun, 2015




 CTH2503NS-T52
CTH2503NS-T52
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TC=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TC=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJC
Thermal Resistance
Junction-Case
Test Conditions
Test Conditions
30
±20
25
100
28
-55 to 150
-55 to 150
Min Note
Vs
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
-- -- 5 oC /W 1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 3
Jun, 2015



Recommended third-party CTH2503NS-T52 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)