N-Channel MOSFET. CTH3506NS-T52 Datasheet

CTH3506NS-T52 MOSFET. Datasheet pdf. Equivalent

Part CTH3506NS-T52
Description N-Channel MOSFET
Feature CTH3506NS-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 60V  Dra.
Manufacture CT Micro
Datasheet
Download CTH3506NS-T52 Datasheet



CTH3506NS-T52
CTH3506NS-T52
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 60V
Drain-Source On-Resistance
RDS(ON) 17m, at VGS= 10V, ID= 30A
Continuous Drain Current at TC=25ID =35.1A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CTH3506NS-T52 is the N-Channel logic
enhancement mode power field effect transistors
are produced using high cell density, DMOS
trench technology. This high density process is
especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application.
Applications
DC/DC Converter
Power Management
CCFL inverter
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Jun, 2015



CTH3506NS-T52
CTH3506NS-T52
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TC=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TC=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJC
Thermal Resistance
Junction-Case
Test Conditions
Test Conditions
60
±20
35.1
140
59.5
-55 to 150
-55 to 150
Min Note
Vs
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
-- -- 2.1 oC /W 1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 3
Jun, 2015





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