N-Channel MOSFET. CTD6006-T52 Datasheet

CTD6006-T52 MOSFET. Datasheet pdf. Equivalent

Part CTD6006-T52
Description N-Channel MOSFET
Feature CTD6006-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 60V  Drain.
Manufacture CT Micro
Datasheet
Download CTD6006-T52 Datasheet



CTD6006-T52
CTD6006-T52
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 60V
Drain-Source On-Resistance
RDS(ON) 20m, at VGS= 10V, ID= 20A
RDS(ON) 24m, at VGS= 4.5V, ID= 10A
Continuous Drain Current at TC=25℃, ID =35A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CTD6006-T52 is the N-Channel logic
enhancement mode power field effect transistors
are produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance. These
devices are particularly suited for low voltage
application.
Applications
Super Low Gate Charge
100% EAS Guaranteed
Green Device Available
Excellent CdV/dt effect decline
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Jan, 2018



CTD6006-T52
CTD6006-T52
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TC=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TC=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJC
Thermal Resistance
Junction-Case
Test Conditions
Test Conditions
60
±20
35
140
44.6
-55 to 150
-55 to 150
Min Note
Vs
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
--
--
2.8
oC /W
1
CT Micro
Proprietary & Confidential
Page 2
Rev 1
Jan, 2018





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