CTD6006-T52

CTD6006-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 60V  Drain-Source On-Resistance RDS(ON) 20m, at VGS= 10V, ID= 20A RDS(ON) 24m, at VGS= 4.5V, ID= 10A  Continuous Drain Current at TC=25℃, ID =35A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTD6006-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. Applications  Super Low Gate Charge  100% EAS Guaranteed  Green Device Available  Excellent CdV/dt effect decline Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 1 Jan, 2018 CTD6006-T52 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current @TC=25℃ IDM Pulsed Drain Current PD Total Power Dissipation @TC=25℃ TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJC Thermal Resistance Junction-Case Test Conditions Test Conditions 60 ±20 35 140 44.6 -55 to 150 -55 to 150 Min Note Vs V A1 A1 W2 °C °C Min Typ Max Units Notes -- -- 2.8 oC /W 1 CT Micro Proprietary & Confidential Page 2 Rev 1 Jan, 2018 C...