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N-Channel MOSFET. CTH1606NS-T52 Datasheet

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N-Channel MOSFET. CTH1606NS-T52 Datasheet






CTH1606NS-T52 MOSFET. Datasheet pdf. Equivalent




CTH1606NS-T52 MOSFET. Datasheet pdf. Equivalent





Part

CTH1606NS-T52

Description

N-Channel MOSFET



Feature


CTH1606NS-T52 N-Channel Enhancement MOSF ET Features Drain-Source Breakdown Vo ltage VDSS 60V Drain-Source On-Resista nce RDS(ON) 52m, at VGS= 10V, ID= 15 A RDS(ON) 70m, at VGS= 4.5V, ID= 10A Continuous Drain Current at TC=25℃I D =16A Advanced high cell density Tren ch Technology RoHS Compliance & Haloge n Free Description The CTH1606NS-T52 i s the N-Channel logic en.
Manufacture

CT Micro

Datasheet
Download CTH1606NS-T52 Datasheet


CT Micro CTH1606NS-T52

CTH1606NS-T52; hancement mode power field effect transi stors are produced using high cell dens ity, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. Applications DC /DC Converter Load Switch LCD Display inverter Power Management Package Ou tline Schematic .


CT Micro CTH1606NS-T52

Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Pa ge 1 Rev 4 Jun, 2015 CTH1606NS-T52 N- Channel Enhancement MOSFET Absolute Ma ximum Rating at 25oC Symbol Parameter s VDS Drain-Source Voltage VGS Gate-S ource Voltage ID Continuous Drain Curr ent @TC=25℃ IDM Pulsed Drain Current PD Total Power Dissipation @TC=25℃ TSTG Storage Tempera.


CT Micro CTH1606NS-T52

ture Range TJ Operating Junction Temper ature Range Thermal Characteristics S ymbol Parameters RӨJC Thermal Resis tance Junction-Case Test Conditions T est Conditions 60 ±25 16 65 25 -55 to 150 -55 to 150 Min Note Vs V A1 A1 W2 °C °C Min Typ Max Units Notes -- -- 5 oC /W 1,3 CT Micro Proprietary & C onfidential Page 2 Rev 4 Jun, 2015 C TH1606NS-T52 N-Channel.

Part

CTH1606NS-T52

Description

N-Channel MOSFET



Feature


CTH1606NS-T52 N-Channel Enhancement MOSF ET Features Drain-Source Breakdown Vo ltage VDSS 60V Drain-Source On-Resista nce RDS(ON) 52m, at VGS= 10V, ID= 15 A RDS(ON) 70m, at VGS= 4.5V, ID= 10A Continuous Drain Current at TC=25℃I D =16A Advanced high cell density Tren ch Technology RoHS Compliance & Haloge n Free Description The CTH1606NS-T52 i s the N-Channel logic en.
Manufacture

CT Micro

Datasheet
Download CTH1606NS-T52 Datasheet




 CTH1606NS-T52
CTH1606NS-T52
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 60V
Drain-Source On-Resistance
RDS(ON) 52m, at VGS= 10V, ID= 15A
RDS(ON) 70m, at VGS= 4.5V, ID= 10A
Continuous Drain Current at TC=25ID =16A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CTH1606NS-T52 is the N-Channel logic
enhancement mode power field effect transistors
are produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance. These
devices are particularly suited for low voltage
application.
Applications
DC/DC Converter
Load Switch
LCD Display inverter
Power Management
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 4
Jun, 2015




 CTH1606NS-T52
CTH1606NS-T52
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TC=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TC=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJC
Thermal Resistance
Junction-Case
Test Conditions
Test Conditions
60
±25
16
65
25
-55 to 150
-55 to 150
Min Note
Vs
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
-- --
5 oC /W 1,3
CT Micro
Proprietary & Confidential
Page 2
Rev 4
Jun, 2015




 CTH1606NS-T52
CTH1606NS-T52
N-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
BVDSS Drain-Source Breakdown Voltage
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Test Conditions
VGS= 0V, ID= 250μA
VDS = 60V, VGS = 0V
VGS = 25V, VDS = 0V
Min Typ Max Units Notes
60 - - V
--
1 µA
-
-
100
nA
On Characteristics
Symbol
Parameters
RDS(ON)
Drain-Source On-Resistance
VGS(th)
Gate-Source Threshold Voltage
Test Conditions
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 10A
VGS = VDS, ID =250μA
Min Typ Max Units Notes
- 52 62 mΩ 3
- 70 86 mΩ 3
1.0
3.0 V
3
Dynamic Characteristics
Symbol
Parameters
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Test Conditions
VGS =0V,
VDVDSS=-=1300VV,
f=1MHz
Min Typ Max Units Notes
- 523 -
- 47 - pF
- 14 -
Switching Characteristics
Symbol
Parameters
TD(ON)
Turn-On Delay Time
TR Rise Time
TD(OFF)
Turn-Off Delay Time
TF Fall Time
QG Total Gate Charge
QGS Gate-Source Charge
QGD
Gate-Drain (Miller) Charge
f=1MHz
Test Conditions
VDS = 30V ,
VGS = 10V,
RG = 3, RL = 15Ω,
ID =1A
VDS = 48V ,
VGS = 10V,
ID =16A
Min Typ Max Units Notes
- 11 -
- 13 -
ns
- 34 -
-4-
- 17 -
- 4.2 - nC
-5-
CT Micro
Proprietary & Confidential
Page 3
Rev 4
Jun, 2015



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