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CTH1606NS-T52 Dataheets PDF



Part Number CTH1606NS-T52
Manufacturers CT Micro
Logo CT Micro
Description N-Channel MOSFET
Datasheet CTH1606NS-T52 DatasheetCTH1606NS-T52 Datasheet (PDF)

CTH1606NS-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 60V  Drain-Source On-Resistance RDS(ON) 52m, at VGS= 10V, ID= 15A RDS(ON) 70m, at VGS= 4.5V, ID= 10A  Continuous Drain Current at TC=25℃ID =16A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTH1606NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density.

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