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N-Channel MOSFET. CTL505NS10-T52 Datasheet

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N-Channel MOSFET. CTL505NS10-T52 Datasheet






CTL505NS10-T52 MOSFET. Datasheet pdf. Equivalent






CTL505NS10-T52 MOSFET. Datasheet pdf. Equivalent


CTL505NS10-T52

Part

CTL505NS10-T52

Description

N-Channel MOSFET



Feature


CTL505NS10-T52 N-Channel Enhancement MOS FET Features Drain-Source Breakdown V oltage VDSS 100V Drain-Source On-Resis tance RDS(ON) 14m, at VGS= 10V, ID= 25A Continuous Drain Current at TC=25 ID =50.5A Advanced high cell density Trench Technology RoHS Compliance & H alogen Free Description The CTL505NS10 -T52 is the N-Channel logic enhancement mode power field effe.
Manufacture

CT Micro

Datasheet
Download CTL505NS10-T52 Datasheet


CT Micro CTL505NS10-T52

CTL505NS10-T52; ct transistors are produced using high c ell density, DMOS trench technology. Th is high density process is especially t ailored to minimize on-state resistance . These devices are particularly suited for low voltage application. Applicat ions DC/DC Converter Load Switch Pow er Management Package Outline Schemat ic Drain Gate Source Drain Gate Sou rce CT Micro Prop.


CT Micro CTL505NS10-T52

rietary & Confidential Page 1 Rev 2 Ju n, 2015 CTL505NS10-T52 N-Channel Enhan cement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain- Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current @TC=25℃ IDM Pulsed Drain Current PD Total Po wer Dissipation @TC=25℃ TSTG Storag e Temperature Range TJ Operating Junct ion Temperature Range .

Part

CTL505NS10-T52

Description

N-Channel MOSFET



Feature


CTL505NS10-T52 N-Channel Enhancement MOS FET Features Drain-Source Breakdown V oltage VDSS 100V Drain-Source On-Resis tance RDS(ON) 14m, at VGS= 10V, ID= 25A Continuous Drain Current at TC=25 ID =50.5A Advanced high cell density Trench Technology RoHS Compliance & H alogen Free Description The CTL505NS10 -T52 is the N-Channel logic enhancement mode power field effe.
Manufacture

CT Micro

Datasheet
Download CTL505NS10-T52 Datasheet




 CTL505NS10-T52
CTL505NS10-T52
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 100V
Drain-Source On-Resistance
RDS(ON) 14m, at VGS= 10V, ID= 25A
Continuous Drain Current at TC=25ID =50.5A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CTL505NS10-T52 is the N-Channel logic
enhancement mode power field effect transistors
are produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance. These
devices are particularly suited for low voltage
application.
Applications
DC/DC Converter
Load Switch
Power Management
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 2
Jun, 2015




 CTL505NS10-T52
CTL505NS10-T52
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TC=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TC=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJC
Thermal Resistance
Junction-Case
Test Conditions
Test Conditions
100
±20
50.5
202
69.4
-55 to 150
-55 to 150
Min Note
Vs
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
-- -- 1.8 oC /W 1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 2
Jun, 2015



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