N-Channel MOSFET. CT3400A-R3 Datasheet

CT3400A-R3 MOSFET. Datasheet pdf. Equivalent

Part CT3400A-R3
Description N-Channel MOSFET
Feature CT3400A-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 30 V • Drain.
Manufacture CT Micro
Datasheet
Download CT3400A-R3 Datasheet



CT3400A-R3
CT3400A-R3
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 30 V
Drain-Source On-Resistance
RDS(ON) 23.0m, at VGS= 10V, IDS= 6.0A
RDS(ON) 26.0m, at VGS= 4.5V, IDS= 5.0A
RDS(ON) 35m, at VGS= 2.5V, IDS= 4.0A
Continuous Drain Current at TA=25 ID = 5.8A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Applications
Power Management
LED Display
DC-DC System
LCD Panel
Package Outline
Description
The CT3400A-R3 uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications .
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 4
Aug, 2015



CT3400A-R3
CT3400A-R3
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TA=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TA=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Ratings
30
±12
5.8
15
1.4
-55 to 150
-55 to 150
Units
V
V
A
A
W
oC
oC
Notes
1
1
2
Min Typ Max Units Notes
-
175
-
oC /W
1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 4
Aug, 2015





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