Document
CTLM17NS10-R3 N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS 100 V • Drain-Source On-Resistance
RDS(ON) 3Ω, at VGS= 10V, ID= 100mA RDS(ON) 3Ω, at VGS= 4.5V, ID= 100mA
℃• Continuous Drain Current at TA=25 ID =0.17A
• Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free
Description
The CTLM17NS10-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
Applications
• Power Management • LCD Display inverter • DC/DC Converter • Load Switch
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
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CTLM17NS10-R3 N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
℃ID Continuous Drain Current @TA=25
IDM Pulsed Drain Current
℃PD Total Power Dissipation @TA=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA4
Thermal Resistance Junction-Ambient (t=10s)
Test Conditions
Test Conditions 100 ±20 0.17 0.7 0.36
-55 to 150 -55 to 150
Min Notes V V A1 A1 W2 °C °C
Min Typ Max Units Notes -- 350 -- oC /W 1,4
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CTLM17NS10-R3 N-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
BVDSS Drain-Source Breakdown Voltage
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Test Conditions VGS= 0V, ID= 250µA VDS = 100V, VGS = 0V VGS = ±20V, VDS = 0V
Min Typ Max Units Notes
100 - - V
--
1 µA
-
-
±100
nA
On Characteristics
Symbol
Parameters
RDS(ON)
Drain-Source On-Resistance
VGS(th)
Gate-Source Threshold Voltage
Test Conditions VGS = 10V, ID = 100mA VGS = 4.5V, ID =100mA VGS = VDS, I ID =250µA
Min Typ Max Units Notes
- 3 6Ω 3
- 3 10 Ω
0.8 --- 2.8 V
3
Dynamic Characteristics
Symbol
Parameters
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Test Conditions VGS =0V, VDS =25V f=1MHz
Min Typ Max Units Notes - 42.5 - 14 - pF -3-
Switching Characteristics
Symbol
Parameters
TD(ON)
Turn-On Delay Time
TR Rise Time
TD(OFF)
Turn-Off Delay Time
TF Fall Time
QG Total Gate Charge
QGS Gate-Source Charge
QGD
Gate-Drain Charge
Test Conditions VDS =30V , RL= 107Ω, VGS = 10V , RG = 50Ω
VDS =10V , VGS = 10V, ID = 0.22A
Min Typ Max Units Notes
- 5.5 -
- 21.7 - 5.3 -
ns
- 6.4 -
- 6.3 -
- 1.6 - nC
- 0.7 -
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CTLM17NS10-R3 N-Channel Enhancement MOSFET
Drain-Source Diode Characteristics
Symbol
Parameters
Test Conditions
VSD Body Diode Forward Voltage
VGS = 0V, ID = 0.34A
ISD Body Diode Continuous Current
Note:
℃1. The power dissipation is limited by 150 junction temperature.
2. Device mounted on a glass-epoxy board
Min Typ Max Units Notes
-
0.9 1.3
V
-
- 0.25 A
1
FR-4 25.4 × 25.4 mm . 2 Oz Copper
Actual Size
3. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2% 4. Thermal Resistance follow JESD51-3.
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Typical Characteristic Curves
CTLM17NS10-R3 N-Channel Enhancement MOSFET
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CTLM17NS10-R3 N-Channel Enhancement MOSFET
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CTLM17NS10-R3 N-Channel Enhancement MOSFET
Test Circuits & Waveforms
Figure 9: Gate Charge Test Circuit
Figure 10: Gate Charge Waveform
Figure 11: Switching Time Test Circuit
Figure 12: Switching Time Waveform
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Package Dimension (SC-59)
CTLM17NS10-R3 N-Channel Enhancement MOSFET
Note: Dimensions in mm
Recommended pad layout for surface mount leadform
Note: Dimensions in mm
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Marking Information
CTLM17NS10-R3 N-Channel Enhancement MOSFET
B710A
B710A: Device Number
Ordering Information
Part Number CTLM17NS10-R3
Description SC-59 Reel
Quantity 3000 pcs
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Rev 1 Jun, 2015
Reflow Profile
CTLM17NS10-R3 N-Channel Enhancement MOSFET
Profile Feature
Temperature Min. (Tsmin) Temperature Max. (Tsmax) Time (ts) from (Tsmin to Tsmax) Ramp-up Rate (tL to tP) Liquidous Temperature (TL) Time (tL) Maintained Above (TL) Peak Body Package Temperature Time (tP) within 5°C of 260°C Ramp-down Rate (TP to TL) Time 25°C to Peak Temperature
Pb-Free Assembly Profile
150°C 200°C 60-120 seconds 3°C/second max. 217°C 60 – 150 seconds 260°C +0°C / -5°C 30 seconds 6°C/second max 8 minutes max.
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CTLM17NS10-R3 .