N-Channel MOSFET. CTLM17NS10-R3 Datasheet

CTLM17NS10-R3 MOSFET. Datasheet pdf. Equivalent

Part CTLM17NS10-R3
Description N-Channel MOSFET
Feature CTLM17NS10-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 100 V • D.
Manufacture CT Micro
Datasheet
Download CTLM17NS10-R3 Datasheet



CTLM17NS10-R3
CTLM17NS10-R3
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 100 V
Drain-Source On-Resistance
RDS(ON) 3, at VGS= 10V, ID= 100mA
RDS(ON) 3, at VGS= 4.5V, ID= 100mA
Continuous Drain Current at TA=25 ID =0.17A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CTLM17NS10-R3 is the N-Channel logic
enhancement mode power field effect transistors are
produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance.
Applications
Power Management
LCD Display inverter
DC/DC Converter
Load Switch
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Jun, 2015



CTLM17NS10-R3
CTLM17NS10-R3
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TA=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TA=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA4
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Test Conditions
100
±20
0.17
0.7
0.36
-55 to 150
-55 to 150
Min Notes
V
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
-- 350 -- oC /W 1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 1
Jun, 2015





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