N-Channel MOSFET. CTL0036NS-R3 Datasheet

CTL0036NS-R3 MOSFET. Datasheet pdf. Equivalent

Part CTL0036NS-R3
Description N-Channel MOSFET
Feature CTL0036NS-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 60 V • Dra.
Manufacture CT Micro
Datasheet
Download CTL0036NS-R3 Datasheet



CTL0036NS-R3
CTL0036NS-R3
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 60 V
Drain-Source On-Resistance
RDS(ON) 3.0, at VGS= 10V, IDS= 500mA
RDS(ON) 4.0, at VGS= 4.5V, IDS= 200mA
Continuous Drain Current at TA=25 ,
ID = 300mA
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
ESD protection 1.5KV
Applications
Cellular phone
Notebook
Power management
Package Outline
Description
The CTL0036NS-R3 is the N-Channel logic
enhancement mode power field effect transistors are
produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance.
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 2
Jun, 2015



CTL0036NS-R3
CTL0036NS-R3
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TA=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TA=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Ratings
60
±20
300
2000
0.35
-55 to 150
-55 to 150
Units
V
V
mA
mA
W
oC
oC
Notes
1
1
2
Min Typ Max Units Notes
-
357
-
oC /W
1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 2
Jun, 2015





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