CTL0642NS-R3 N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 20 V Drain-Source On-Resistance
RDS(ON) 17mΩ, at VGS= 4.5V, IDS= 6.4A RDS(ON) 20mΩ, at VGS= 2.5V, IDS= 5.5A RDS(ON) 25mΩ, at VGS= 1.8V, IDS= 5.0A
℃ Continuous Drain Current at TA=25 ID = 6.4A
Advanced high cell density Trench Technology RoHS Compliance & Halogen ...
