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N-Channel MOSFET. CT2300-R3 Datasheet

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N-Channel MOSFET. CT2300-R3 Datasheet






CT2300-R3 MOSFET. Datasheet pdf. Equivalent




CT2300-R3 MOSFET. Datasheet pdf. Equivalent





Part

CT2300-R3

Description

N-Channel MOSFET



Feature


CT2300-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Vol tage VDSS 20 V • Drain-Source On-Resi stance RDS(ON) 22mΩ, at VGS= 4.5V, ID S= 4.0A RDS(ON) 27mΩ, at VGS= 2.5V, I DS= 3.0A ℃• Continuous Drain Curren t at TA=25 ID = 4.0A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Power Management • Lithium Ion .
Manufacture

CT Micro

Datasheet
Download CT2300-R3 Datasheet


CT Micro CT2300-R3

CT2300-R3; Battery Description The CT2300-R3 uses high performance Trench Technology to p rovide excellent RDS(ON) and low gate c harge which is suitable for most of the synchronous buck converter application s . Package Outline Drain Gate Sour ce Schematic Drain Gate Source CT M icro Proprietary & Confidential Page 1 Rev 2 Jun, 2015 CT2300-R3 N-Channel Enhancement MOSFET.


CT Micro CT2300-R3

Absolute Maximum Rating at 25oC Symbo l Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ℃ID Continu ous Drain Current @TA=25 IDM Pulsed Dr ain Current ℃PD Total Power Dissipati on @TA=25 TSTG Storage Temperature Ra nge TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient (t=10s.


CT Micro CT2300-R3

) Test Conditions Ratings 20 ±12 4.0 13.5 1.25 -55 to 150 -55 to 150 Units V V A A W oC oC Notes 1 1 2 Min Typ M ax Units Notes - 175 - oC /W 1,4 CT Micro Proprietary & Confidential Pa ge 2 Rev 2 Jun, 2015 CT2300-R3 N-Chan nel Enhancement MOSFET Electrical Char acteristics TA = 25°C (unless otherwis e specified) Static Characteristics S ymbol Parameters B.

Part

CT2300-R3

Description

N-Channel MOSFET



Feature


CT2300-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Vol tage VDSS 20 V • Drain-Source On-Resi stance RDS(ON) 22mΩ, at VGS= 4.5V, ID S= 4.0A RDS(ON) 27mΩ, at VGS= 2.5V, I DS= 3.0A ℃• Continuous Drain Curren t at TA=25 ID = 4.0A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Power Management • Lithium Ion .
Manufacture

CT Micro

Datasheet
Download CT2300-R3 Datasheet




 CT2300-R3
CT2300-R3
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 20 V
Drain-Source On-Resistance
RDS(ON) 22m, at VGS= 4.5V, IDS= 4.0A
RDS(ON) 27m, at VGS= 2.5V, IDS= 3.0A
Continuous Drain Current at TA=25 ID = 4.0A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Applications
Power Management
Lithium Ion Battery
Description
The CT2300-R3 uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications .
Package Outline
Drain
Gate
Source
Schematic
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 2
Jun, 2015




 CT2300-R3
CT2300-R3
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TA=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TA=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Ratings
20
±12
4.0
13.5
1.25
-55 to 150
-55 to 150
Units
V
V
A
A
W
oC
oC
Notes
1
1
2
Min Typ Max Units Notes
-
175
-
oC /W
1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 2
Jun, 2015




 CT2300-R3
CT2300-R3
N-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
BVDSS Drain-Source Breakdown Voltage
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Test Conditions
VGS=0V, ID= 250µA
VDS = 20V, VGS = 0V
VGS = ±12V, VDS = 0V
Min Typ Max Units Notes
20 - - V
- - 1 µA
-
-
±100
nA
On Characteristics
Symbol
Parameters
RDS(ON)
Drain-Source On-Resistance
VGS(TH) Gate-Source Threshold Voltage
Test Conditions
VGS = 4.5V, ID = 4.5A
VGS = 2.5V, ID = 4.0A
VGS = VDS, ID =250µA
Min Typ Max Units Notes
- 22 33 m
- 27 40 m
0.4 - 1.0 V
Dynamic Characteristics
Symbol
Parameters
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Test Conditions
VDS = 10V ,
VGS = 0V,
f=1MHz
Min Typ Max Units Notes
- 600 -
- 85 - pF
- 75 -
Switching Characteristics
Symbol
Parameters
TD(ON)
Turn-On Delay Time
TR Rise Time
TD(OFF)
Turn-Off Delay Time
TF Fall Time
QG Total Gate Charge
QGS Gate-Source Charge
QGD
Gate-Drain (Miller) Charge
Test Conditions
VDS = 10V , VGS = 4.5V,
RG = 6, ID =1A
VDS = 10V , VGS = 4.5V,
ID = 4.5A
Min Typ Max Units Notes
- 3.5 -
- 23 -
Fig
ns
- 39 -
11 & 12
- 24
- 7.5 -
Fig
- 1 - nC
9 & 10
-2-
CT Micro
Proprietary & Confidential
Page 3
Rev 2
Jun, 2015



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