CT2300-R3 N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 20 V Drain-Source On-Resistance
RDS(ON) 22mΩ, at VGS= 4.5V, IDS= 4.0A RDS(ON) 27mΩ, at VGS= 2.5V, IDS= 3.0A
℃ Continuous Drain Current at TA=25 ID = 4.0A
Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Applications
Power Management Li...
