N-Channel MOSFET. CTL190NS10-T52 Datasheet

CTL190NS10-T52 MOSFET. Datasheet pdf. Equivalent

Part CTL190NS10-T52
Description N-Channel MOSFET
Feature CTL190NS10-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 100V  D.
Manufacture CT Micro
Datasheet
Download CTL190NS10-T52 Datasheet



CTL190NS10-T52
CTL190NS10-T52
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 100V
Drain-Source On-Resistance
RDS(ON) 65m, at VGS= 10V, ID= 12A
RDS(ON) 75m, at VGS= 5V, ID= 12A
Continuous Drain Current at TC=25ID =19A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CTL190NS10-T52 is the N-Channel logic
enhancement mode power field effect transistors
are produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance. These
devices are particularly suited for low voltage
application.
Applications
DC/DC Converter
Load Switch
LCD Display inverter
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 2
Jun, 2015



CTL190NS10-T52
CTL190NS10-T52
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TC=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TC=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJC
Thermal Resistance
Junction-Case
Test Conditions
Test Conditions
100
±20
19
76
45
-55 to 150
-55 to 150
Min Note
Vs
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
-- -- 2.8 oC /W 1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 2
Jun, 2015





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