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N-Channel MOSFET. CTH4106NS-T52 Datasheet

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N-Channel MOSFET. CTH4106NS-T52 Datasheet






CTH4106NS-T52 MOSFET. Datasheet pdf. Equivalent






CTH4106NS-T52 MOSFET. Datasheet pdf. Equivalent


CTH4106NS-T52

Part

CTH4106NS-T52

Description

N-Channel MOSFET



Feature


CTH4106NS-T52 N-Channel Enhancement MOSF ET Features Drain-Source Breakdown Vo ltage VDSS = 60V Drain-Source On-Resis tance RDS(ON) 16m, at VGS= 10V, ID= 50A Continuous Drain Current at TC=25 ID = 41A Advanced high cell density Trench Technology RoHS Compliance & Ha logen Free Description The CTH4106NS T52 uses high performance Trench Tech nology to provide excell.
Manufacture

CT Micro

Datasheet
Download CTH4106NS-T52 Datasheet


CT Micro CTH4106NS-T52

CTH4106NS-T52; ent RDS(ON)and low gate charge which is suitable for most of the synchronous bu ck converter applications . Applicatio ns Notebook High side switching Powe r Management Package Outline Drain G ate Source Schematic Drain Gate Sourc e CT Micro Proprietary & Confidential Page 1 Rev 2 Jun, 2015 CTH4106NS-T52 N-Channel Enhancement MOSFET Absolute Maximum Rating at.


CT Micro CTH4106NS-T52

25oC Symbol Parameters VDS Drain-Sou rce Voltage VGS Gate-Source Voltage I D Continuous Drain Current @TC=25℃ I DM Pulsed Drain Current PD Total Power Dissipation @TC=25℃ TSTG Storage T emperature Range TJ Operating Junction Temperature Range Thermal Characteris tics Symbol Parameters RӨJC Therma l Resistance Junction-Case Test Condit ions Steady State Test.

Part

CTH4106NS-T52

Description

N-Channel MOSFET



Feature


CTH4106NS-T52 N-Channel Enhancement MOSF ET Features Drain-Source Breakdown Vo ltage VDSS = 60V Drain-Source On-Resis tance RDS(ON) 16m, at VGS= 10V, ID= 50A Continuous Drain Current at TC=25 ID = 41A Advanced high cell density Trench Technology RoHS Compliance & Ha logen Free Description The CTH4106NS T52 uses high performance Trench Tech nology to provide excell.
Manufacture

CT Micro

Datasheet
Download CTH4106NS-T52 Datasheet




 CTH4106NS-T52
CTH4106NS-T52
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS = 60V
Drain-Source On-Resistance
RDS(ON) 16m, at VGS= 10V, ID= 50A
Continuous Drain Current at TC=25ID = 41A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CTH4106NS T52 uses high performance
Trench Technology to provide excellent RDS(ON)and
low gate charge which is suitable for most of the
synchronous buck converter applications .
Applications
Notebook
High side switching
Power Management
Package Outline
Drain
Gate
Source
Schematic
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 2
Jun, 2015




 CTH4106NS-T52
CTH4106NS-T52
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TC=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TC=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJC
Thermal Resistance
Junction-Case
Test Conditions
Steady State
Test Conditions
60
±20
41
160
59.5
-55 to 150
-55 to 150
Min Notes
V
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
-- -- 2.1 oC /W 1,3
CT Micro
Proprietary & Confidential
Page 2
Rev 2
Jun, 2015



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