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CTH4106NS-T52

N-Channel MOSFET

Description

CTH4106NS-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS = 60V  Drain-Source On-Resistance RDS(ON) 16m, at VGS= 10V, ID= 50A  Continuous Drain Current at TC=25℃ID = 41A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTH4106NS –T52 uses high performance Trench Technology to...

CT Micro

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CTH4106NS-T52 N-Channel MOSFET - CT Micro

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