N-Channel MOSFET. CTH11055NS Datasheet

CTH11055NS MOSFET. Datasheet pdf. Equivalent

Part CTH11055NS
Description N-Channel MOSFET
Feature CTH11055NS N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 55V  Drain-.
Manufacture CT Micro
Datasheet
Download CTH11055NS Datasheet



CTH11055NS
CTH11055NS
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 55V
Drain-Source On-Resistance
RDS(ON) 8m, at VGS= 10, ID= 59A
Continuous Drain Current at TC=25ID =110A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
These Power MOSFETs utilizes Advanced Trench
Process Technology which comes with High
Density Cell Design for Ultra Low RDS(ON).
The device exhibits rugged avalanche
characteristics and guaranteed to withstand a
stipulated level of energy in the breakdown mode.
Applications
Switching Applications
Motor Drivers
Relay Drivers
Package Outline
Schematic
Pin 1
CT Micro
Proprietary & Confidential
Gate:
Drain:
Source:
Pin 1
Pin 2
Pin 3
Page 1
Rev 1
Aug, 2013



CTH11055NS
CTH11055NS
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current
PD Total Power Dissipation
EAS
Pulsed Avalanche Rating
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Test Conditions
55
±20
110
300
200
850
-55 to 150
-55 to 150
Min Notes
V
V
A1
A1
W2
mJ
°C
°C
Thermal Characteristics
Symbol
Parameters
RӨJA
Thermal Resistance
Junction-Ambient
Test Conditions
Min Typ Max Units Notes
-- 62.5 -- oC /W 1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 1
Aug, 2013





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