CTH11055NS

CTH11055NS N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 55V  Drain-Source On-Resistance RDS(ON) 8m, at VGS= 10, ID= 59A  Continuous Drain Current at TC=25℃ID =110A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description These Power MOSFETs utilizes Advanced Trench Process Technology which comes with High Density Cell Design for Ultra Low RDS(ON). The device exhibits rugged avalanche characteristics and guaranteed to withstand a stipulated level of energy in the breakdown mode. Applications  Switching Applications  Motor Drivers  Relay Drivers Package Outline Schematic Pin 1 CT Micro Proprietary & Confidential Gate: Drain: Source: Pin 1 Pin 2 Pin 3 Page 1 Rev 1 Aug, 2013 CTH11055NS N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current IDM Pulsed Drain Current PD Total Power Dissipation EAS Pulsed Avalanche Rating TSTG Storage Temperature Range TJ Operating Junction Temperature Range Test Conditions 55 ±20 110 300 200 850 -55 to 150 -55 to 150 Min Notes V V A1 A1 W2 mJ °C °C Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient Test Conditions Min Typ Max Units Notes -- 62.5 -- oC /W 1,4 CT Micro Proprietary & Confidential Page 2 Rev 1 Aug, 2013 CTH11055NS N-Channel Enhancement MOSFET Electrical Characteristics TA = 25°C (unless otherwise ...