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P-Channel MOSFET. CT2301-R3 Datasheet

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P-Channel MOSFET. CT2301-R3 Datasheet






CT2301-R3 MOSFET. Datasheet pdf. Equivalent






CT2301-R3 MOSFET. Datasheet pdf. Equivalent


CT2301-R3

Part

CT2301-R3

Description

P-Channel MOSFET



Feature


CT2301-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Vol tage VDSS - 20 V • Drain-Source On-Re sistance RDS(ON) 85mΩ, at VGS= - 4.5V , IDS= - 3.0A RDS(ON) 100mΩ, at VGS= - 2.5V, IDS= - 2.0A ℃• Continuous D rain Current at TA=25 ID = - 3.0A • A dvanced high cell density Trench Techno logy • RoHS Compliance & Halogen Free Applications • Power Management •.
Manufacture

CT Micro

Datasheet
Download CT2301-R3 Datasheet


CT Micro CT2301-R3

CT2301-R3; Portable Equipment • Battery Powered System • Load Switch Description The CT2301-R3 uses high performance Trench Technology to provide excellent RDS(ON ) and low gate charge which is suitable for most of the synchronous buck conve rter applications . Package Outline S chematic Drain Drain Gate Source G ate Source CT Micro Proprietary & Con fidential Page 1 Rev.


CT Micro CT2301-R3

4 Aug, 2015 CT2301-R3 P-Channel Enhanc ement MOSFET Absolute Maximum Rating a t 25oC Symbol Parameters VDS Drain-S ource Voltage VGS Gate-Source Voltage ℃ID Continuous Drain Current @TA=25 IDM Pulsed Drain Current PD Total Powe r Dissipation TSTG Storage Temperatur e Range TJ Operating Junction Temperat ure Range Thermal Characteristics Sym bol Parameters RӨJ.

Part

CT2301-R3

Description

P-Channel MOSFET



Feature


CT2301-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Vol tage VDSS - 20 V • Drain-Source On-Re sistance RDS(ON) 85mΩ, at VGS= - 4.5V , IDS= - 3.0A RDS(ON) 100mΩ, at VGS= - 2.5V, IDS= - 2.0A ℃• Continuous D rain Current at TA=25 ID = - 3.0A • A dvanced high cell density Trench Techno logy • RoHS Compliance & Halogen Free Applications • Power Management •.
Manufacture

CT Micro

Datasheet
Download CT2301-R3 Datasheet




 CT2301-R3
CT2301-R3
P-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS - 20 V
Drain-Source On-Resistance
RDS(ON) 85m, at VGS= - 4.5V, IDS= - 3.0A
RDS(ON) 100m, at VGS= - 2.5V, IDS= - 2.0A
Continuous Drain Current at TA=25 ID = - 3.0A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Applications
Power Management
Portable Equipment
Battery Powered System
Load Switch
Description
The CT2301-R3 uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications .
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 4
Aug, 2015




 CT2301-R3
CT2301-R3
P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TA=25
IDM Pulsed Drain Current
PD Total Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Ratings
-20
±12
-3.0
-12
1.25
-55 to 150
-55 to 150
Units
V
V
A
A
W
oC
oC
Notes
1
1
2
Min Typ Max Units Notes
-
200
-
oC /W
1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 4
Aug, 2015



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