P-Channel MOSFET. CT2321-R3 Datasheet

CT2321-R3 MOSFET. Datasheet pdf. Equivalent

Part CT2321-R3
Description P-Channel MOSFET
Feature CT2321-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS - 20 V • Drai.
Manufacture CT Micro
Datasheet
Download CT2321-R3 Datasheet



CT2321-R3
CT2321-R3
P-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS - 20 V
Drain-Source On-Resistance
RDS(ON) 42m, at VGS= - 4.5V, IDS= - 3.8A
RDS(ON) 57m, at VGS= - 2.5V, IDS= - 3.0A
Continuous Drain Current at TA=25 ID = - 3.8A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Applications
Power Management
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
Package Outline
Description
The CT2321-R3 uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications .
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Oct, 2014



CT2321-R3
CT2321-R3
P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current
PD Total Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Ratings
-20
±12
-3.8
-15
1.25
-55 to 150
-55 to 150
Units
V
V
A
A
W
oC
oC
Notes
1
1
2
Min Typ Max Units Notes
-
200
-
oC /W
1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 3
Oct, 2014





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