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P-Channel MOSFET. CT2321-R3 Datasheet

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P-Channel MOSFET. CT2321-R3 Datasheet






CT2321-R3 MOSFET. Datasheet pdf. Equivalent






CT2321-R3 MOSFET. Datasheet pdf. Equivalent


CT2321-R3

Part

CT2321-R3

Description

P-Channel MOSFET



Feature


CT2321-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Vol tage VDSS - 20 V • Drain-Source On-Re sistance RDS(ON) 42mΩ, at VGS= - 4.5V , IDS= - 3.8A RDS(ON) 57mΩ, at VGS= - 2.5V, IDS= - 3.0A ℃• Continuous Dr ain Current at TA=25 ID = - 3.8A • Ad vanced high cell density Trench Technol ogy • RoHS Compliance & Halogen Free Applications • Power Management • .
Manufacture

CT Micro

Datasheet
Download CT2321-R3 Datasheet


CT Micro CT2321-R3

CT2321-R3; Portable Equipment • Battery Powered S ystem • DC/DC Converter • Load Swit ch Package Outline Description The CT2 321-R3 uses high performance Trench Tec hnology to provide excellent RDS(ON) an d low gate charge which is suitable for most of the synchronous buck converter applications . Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidenti.


CT Micro CT2321-R3

al Page 1 Rev 3 Oct, 2014 CT2321-R3 P -Channel Enhancement MOSFET Absolute M aximum Rating at 25oC Symbol Paramete rs VDS Drain-Source Voltage VGS Gate- Source Voltage ID Continuous Drain Cur rent IDM Pulsed Drain Current PD Tota l Power Dissipation TSTG Storage Temp erature Range TJ Operating Junction Te mperature Range Thermal Characteristic s Symbol Paramet.

Part

CT2321-R3

Description

P-Channel MOSFET



Feature


CT2321-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Vol tage VDSS - 20 V • Drain-Source On-Re sistance RDS(ON) 42mΩ, at VGS= - 4.5V , IDS= - 3.8A RDS(ON) 57mΩ, at VGS= - 2.5V, IDS= - 3.0A ℃• Continuous Dr ain Current at TA=25 ID = - 3.8A • Ad vanced high cell density Trench Technol ogy • RoHS Compliance & Halogen Free Applications • Power Management • .
Manufacture

CT Micro

Datasheet
Download CT2321-R3 Datasheet




 CT2321-R3
CT2321-R3
P-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS - 20 V
Drain-Source On-Resistance
RDS(ON) 42m, at VGS= - 4.5V, IDS= - 3.8A
RDS(ON) 57m, at VGS= - 2.5V, IDS= - 3.0A
Continuous Drain Current at TA=25 ID = - 3.8A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Applications
Power Management
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
Package Outline
Description
The CT2321-R3 uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications .
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Oct, 2014




 CT2321-R3
CT2321-R3
P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current
PD Total Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Ratings
-20
±12
-3.8
-15
1.25
-55 to 150
-55 to 150
Units
V
V
A
A
W
oC
oC
Notes
1
1
2
Min Typ Max Units Notes
-
200
-
oC /W
1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 3
Oct, 2014



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