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Phototransistor Optocoupler. CT851 Datasheet

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Phototransistor Optocoupler. CT851 Datasheet






CT851 Optocoupler. Datasheet pdf. Equivalent




CT851 Optocoupler. Datasheet pdf. Equivalent





Part

CT851

Description

Phototransistor Optocoupler



Feature


CT851 Series DC Input 4-Pin Phototransis tor Optocoupler Features • High isol ation 5000 VRMS • CTR flexibility ava ilable see order information • DC inp ut with transistor output • External Creepage ≥ 7.5mm (S/SL Type) • Exte rnal Creepage ≥ 8.0mm (SLM Type) • Operating temperature range - 55 °C to 100 °C • Regulatory Approvals UL - UL1577 (E364000) VDE - EN60747-5-5(VDE.
Manufacture

CT Micro

Datasheet
Download CT851 Datasheet


CT Micro CT851

CT851; 0884-5) CQC – GB4943.1, GB8898 IEC6006 5, IEC60950 Description The CT851 seri es consists of a high power transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DI P package different lead forming option s. Applications • Switch mode power s upplies • Computer peripheral interfa ce • Microprocessor system interface Package Outline Schemati.


CT Micro CT851

c Note: Different lead forming options available. See package dimension. CT M icro Proprietary & Confidential Page 1 Rev 1 Jun, 2015 CT851 Series DC Inpu t 4-Pin Phototransistor Optocoupler Ab solute Maximum Rating at 25oC Symbol Parameters VISO Isolation voltage PTO T Total power dissipation TOPR Operati ng temperature TSTG Storage temperatur e TSOL Soldering .


CT Micro CT851

temperature Emitter IF Forward current IF(TRANS) Peak transient current (≤ 1µs P.W,300pps) VR Reverse voltage P D Emitter power dissipation Detector PD Detector power dissipation BVCEO Co llector-Emitter Breakdown Voltage BVEC O Emitter-Collector Breakdown Voltage IC Collector Current Ratings 5000 260 -55 ~ +100 -55 ~ +150 260 80 1 6 150 30 0 350 7 100 Units VR.

Part

CT851

Description

Phototransistor Optocoupler



Feature


CT851 Series DC Input 4-Pin Phototransis tor Optocoupler Features • High isol ation 5000 VRMS • CTR flexibility ava ilable see order information • DC inp ut with transistor output • External Creepage ≥ 7.5mm (S/SL Type) • Exte rnal Creepage ≥ 8.0mm (SLM Type) • Operating temperature range - 55 °C to 100 °C • Regulatory Approvals UL - UL1577 (E364000) VDE - EN60747-5-5(VDE.
Manufacture

CT Micro

Datasheet
Download CT851 Datasheet




 CT851
CT851 Series
DC Input 4-Pin Phototransistor Optocoupler
Features
High isolation 5000 VRMS
CTR flexibility available see order information
DC input with transistor output
External Creepage 7.5mm (S/SL Type)
External Creepage 8.0mm (SLM Type)
Operating temperature range - 55 °C to 100 °C
Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC – GB4943.1, GB8898
IEC60065, IEC60950
Description
The CT851 series consists of a high power transistor
optically coupled to a gallium arsenide
Infrared-emitting diode in a 4-lead DIP package
different lead forming options.
Applications
Switch mode power supplies
Computer peripheral interface
Microprocessor system interface
Package Outline
Schematic
Note: Different lead forming options available. See package
dimension.
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Jun, 2015




 CT851
CT851 Series
DC Input 4-Pin Phototransistor Optocoupler
Absolute Maximum Rating at 25oC
Symbol
Parameters
VISO Isolation voltage
PTOT Total power dissipation
TOPR Operating temperature
TSTG Storage temperature
TSOL Soldering temperature
Emitter
IF Forward current
IF(TRANS) Peak transient current (1µs P.W,300pps)
VR Reverse voltage
PD Emitter power dissipation
Detector
PD Detector power dissipation
BVCEO Collector-Emitter Breakdown Voltage
BVECO Emitter-Collector Breakdown Voltage
IC Collector Current
Ratings
5000
260
-55 ~ +100
-55 ~ +150
260
80
1
6
150
300
350
7
100
Units
VRMS
mW
oC
oC
oC
Notes
mA
A
V
mW
mW
V
V
mA
CT Micro
Proprietary & Confidential
Page 2
Rev 1
Jun, 2015




 CT851
CT851 Series
DC Input 4-Pin Phototransistor Optocoupler
Electrical Characteristics TA = 25°C (unless otherwise specified)
Emitter Characteristics
Symbol
Parameters
VF Forward voltage
IR Reverse Current
CIN Input Capacitance
Test Conditions
IF=10mA
VR = 6V
f= 1MHz
Min Typ Max Units Notes
-
1.2 1.4
V
- - 5 µA
- 30 - pF
Detector Characteristics
Symbol
Parameters
BVCEO Collector-Emitter Breakdown
BVECO Emitter-Collector Breakdown
ICEO Collector-Emitter Dark Current
Test Conditions
IC= 0.1mA
IE= 0.1mA
VCE= 200V, IF=0mA
Min Typ Max Units Notes
350 - - V
7- -V
- - 100 nA
Transfer Characteristics
Symbol
Parameters
CTR Current Transfer Ratio
VCE(SAT)
RIO
CIO
Collector-Emitter Saturation
Voltage
Isolation Resistance
Isolation Capacitance
Test Conditions
IF= 5mA, VCE= 5V
IF= 20mA, IC= 1mA
VIO= 500VDC
f= 1MHz
Min Typ Max Units Notes
50 - 600 %
- - 0.4 V
5x1010
-
-
- 0.5 1 pF
Switching Characteristics
Symbol
Parameters
tr Rise Time
tf Fall Time
Test Conditions
Min Typ Max Units Notes
-6-
IC= 2mA, VCE= 2V, RL= 100
µs
-8-
CT Micro
Proprietary & Confidential
Page 3
Rev 1
Jun, 2015



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