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4N31

CT Micro

Photodarlington Optocoupler

4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Features ...



4N31

CT Micro


Octopart Stock #: O-1435150

Findchips Stock #: 1435150-F

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Description
4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Features  High isolation 5000 VRMS  CTR flexibility available see order information  DC input with transistor output  Temperature range - 55 °C to 100 °C  Regulatory Approvals  UL - UL1577 (E364000)  VDE - EN60747-5-5(VDE0884-5)  CQC – GB4943.1, GB8898  IEC60065, IEC60950 Applications  Switch mode power supplies  Computer peripheral interface  Microprocessor system interface Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Package Outline Schematic Note: Different bending options available. See package dimension. CT Microelectronics Proprietary & Confidential Page 1 Rev 1 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Absolute Maximum Rating at 25oC Symbol Parameters VISO Isolation voltage TOPR Operating temperature TSTG Storage temperature TSOL Soldering temperature Emitter IF IF(TRANS) Forward current Peak transient current (≤1μs P.W,300pps) VR Reverse voltage PD Power dissipation Detector PD Power dissipation BVCEO Collector-Emitter Breakdown Voltage BVCBO Collector-Base Breakdown Voltage BVECO Emitter-Collector Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage ...




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