4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler
Features
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4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler
Features
High isolation 5000 VRMS CTR flexibility available see order information DC input with
transistor output Temperature range - 55 °C to 100 °C
Regulatory Approvals
UL - UL1577 (E364000) VDE - EN60747-5-5(VDE0884-5) CQC – GB4943.1, GB8898 IEC60065, IEC60950
Applications
Switch mode power supplies Computer peripheral interface
Microprocessor system interface
Description
The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington
transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option.
Package Outline
Schematic
Note: Different bending options available. See package dimension.
CT Microelectronics Proprietary & Confidential
Page 1
Rev 1 Apr, 2014
4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler
Absolute Maximum Rating at 25oC
Symbol
Parameters
VISO Isolation voltage
TOPR Operating temperature
TSTG Storage temperature
TSOL Soldering temperature
Emitter
IF IF(TRANS)
Forward current Peak transient current (≤1μs P.W,300pps)
VR Reverse voltage
PD Power dissipation
Detector
PD Power dissipation
BVCEO Collector-Emitter Breakdown Voltage
BVCBO Collector-Base Breakdown Voltage
BVECO Emitter-Collector Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
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