PT8300BT

PT8300BT 3mm Lamp Type Photo Transistor Features  High photo sensitivity  High reliability  Spectral range of sensitivity: 760-1100nm  Fast Response time  RoHS compliance Applications  Infrared sensor  Optical switches Description The PT8300BT is silicon NPN Phototransistor. The device comes with a superior filtering for visible light by utilizing special black epoxy. Package Outline Schematic Emitter Collector CT Micro Proprietary & Confidential Page 1 Rev 1 May, 2014 PT8300BT 3mm Lamp Type Photo Transistor Absolute Maximum Rating at 250C Symbol Parameters IC Collector Current BVCEO Collector-Emitter Voltage BVECO Emitter-Collector Voltage Topr Operating Temperature Tstg Storage Temperature Tsol Soldering Temperature Pto Total Power Dissipation Optical Characteristics Symbol Parameters  Spectral Bandwidth P Peak Sensitivity θ1/2 View Angle Test Conditions - VCE=5V Electrical Characteristics Symbol Parameters ICEO Dark Current VCE(sat) Collector-Emitter Saturation Voltage IC Collector Light Current CT Terminal Capacitance Test Conditions Ee=0mW /cm2 VCE=20V Ee=1mW /cm2 IC=0.9mA Ee=1mW /cm2 P=940nm, VCE=5V Ee=0mW /cm2 f=1MHz ,VCE=5V Ratings 20 35 5 -40 ~ +85 -40 ~ +100 260 150 Units mA V V 0C 0C 0C mW Notes 1 2 3 Min Typ Max Units Notes 760 - 1100 nm - 880 - nm - 25 - deg Min Typ Max Units Notes - - 100 nA - - 0.4 V 0.9 3.0 6.4 mA 4 - 3.80 - pF CT Micro Proprietary & Confidential Page 2 Rev 1 May, 2014 PT8300BT 3mm La...