Infrared Emitter. HIRP1608W11-B10 Datasheet

HIRP1608W11-B10 Emitter. Datasheet pdf. Equivalent

Part HIRP1608W11-B10
Description Infrared Emitter
Feature HIRP1608W11-B10 SMD Type 850nm Infrared Emitter Features  Small double-end package  Viewing Angle.
Manufacture CT Micro
Datasheet
Download HIRP1608W11-B10 Datasheet



HIRP1608W11-B10
HIRP1608W11-B10
SMD Type 850nm Infrared Emitter
Features
Small double-end package
Viewing Angle at X axis (Note3) = 550
High reliability
Good spectral matching to Si photo detector
RoHS compliance
Applications
Infrared sensor
Description
The HIRP1608W11-B10 is a GaAlAs infrared LED
housed in a miniature SMD package. The device
has a peak wavelength of 850nm LED spectrally
matched with phototransistor or photodiode.
Package Outline
Schematic
Anode
Cathode
CT Micro
Proprietary & Confidential
Page 1
Rev 0.1(Preliminary)
Mar, 2018



HIRP1608W11-B10
HIRP1608W11-B10
SMD Type 850nm Infrared Emitter
Absolute Maximum Rating at 250C
Symbol
Parameters
IF Continuous Forward Current
IFP Peak Forward Current
VR Reverse Voltage
Topr Operating Temperature
Tstg Storage Temperature
Tsol Soldering Temperature
PD Power Dissipation at(or below) 25Free Air Temperature
Ratings
70
0.7
5
-40 ~ +85
-40 ~ +100
260
140
Units
mA
A
V
0C
0C
0C
mW
Notes
1
2
Electro-Optical Characteristics TA = 25°C (unless otherwise specified)
Optical Characteristics
Symbol
Parameters
Ie Radiant Intensity
λp Peak Wavelength
Δλ Spectral Bandwidth
θ1/2
Angle of Half Intensity (X)
Angle of Half Intensity (Y)
Test Conditions
IF=20mA
IF =70mA
IF=20mA
IF=20mA
IF=20mA
Min Typ Max Units Notes
2.5 4.5 8.0
mW/sr
- 16 -
- 850 - nm
- 30 - nm
- 55 -
deg 3
- 37.5 -
Electrical Characteristics
Symbol
Parameters
VF Forward Voltage
IR Reverse Current
Test Conditions
IF=20mA
IF=70mA
VR=5V
Notes:
1. IFP Conditions--Pulse Width100μs and Duty1%.
2. Soldering time5 seconds
3. Test condition :
Min Typ Max Units Notes
1.2 1.4 1.7
1.3 1.6 2.0
V
- - 10 µA
CT Micro
Proprietary & Confidential
Page 2
Rev 0.1(Preliminary)
Mar, 2018





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