P-Channel MOSFET. SSP7431P Datasheet

SSP7431P MOSFET. Datasheet pdf. Equivalent

Part SSP7431P
Description P-Channel MOSFET
Feature Elektronische Bauelemente SSP7431P -17A, -30V, RDS(ON) 13 m P-Channel Enhancement MOSFET RoHS Com.
Manufacture SeCoS
Datasheet
Download SSP7431P Datasheet



SSP7431P
Elektronische Bauelemente
SSP7431P
-17A, -30V, RDS(ON) 13 m
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize
a high cell density trench process to provide low RDS(on)
and to ensure minimal power loss and heat dissipation.
SOP-8PP
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe SOP-8PP
saves board space.
Fast switching speed.
High performance trench technology.
APPLICATION
DC-DC converters and power management in
portable and battery-powered products such as
computers, printers, PCMCIA cards, cellular and
cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SOP-8PP
3K
Leader Size
13 inch
S
S
S
G
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 0.85 1.00 θ 0° 10°
B 5.3 BSC. b 5.2 BCS
C 0.15 0.25 c 0.30 0.50
D 3.8 BCS. d 1.27BSC
D E 6.05 BCS. e 5.55 BCS.
F 0.03 0.30 f 0.10 0.40
D G 4.35 BCS. g
1.2 BCS.
L 0.40 0.70
D
D
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1
TA=25°C
TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
TA=25°C
TA=70°C
ID
IDM
IS
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Junction to Ambient 1
t10 sec
Steady-State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJA
http://www.SeCoSGmbH.com/
18-Sep-2013 Rev. D
Rating
-30
±20
-17
-14
-50
-2.1
5.0
3.2
-55~150
25
65
Unit
V
V
A
A
A
W
°C
°C / W
Any changes of specification will not be informed individually.
Page 1 of 4



SSP7431P
Elektronische Bauelemente
SSP7431P
-17A, -30V, RDS(ON) 13 m
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
Forward Transconductance 1
Diode Forward Voltage
V(BR)DSS
VGS(th)
Static
-30
-1
-
-
IGSS
IDSS
--
--
--
ID(ON)
RDS(ON)
-50
-
-
-
-
-
gFS - 29
VSD - -0.8
Dynamic 2
-
-
±100
-1
-5
-
13
19
-
-
V VGS=0, ID = -250μA
V VDS=VGS, ID = -250μA
nA VDS=0, VGS= ±25V
μA VDS= -24V, VGS=0
VDS= -24V, VGS=0, TJ=55°C
A VDS= -5V, VGS= -10V
mVGS= -10V, ID= -11.5A
VGS= -4.5V, ID= -9.3A
S VDS= -15V,,ID= -11.5A
V IS=2.5A, VGS=0
Total Gate Charge
Qg - 25 -
Gate-Source Charge
Qgs - 11 -
Gate-Drain Charge
Qgd - 17 -
Turn-On Delay Time
Td(ON)
- 15 -
Rise Time
Tr - 13 -
Turn-Off Delay Time
Td(OFF)
- 100 -
Fall Time
Tf - 54 -
Notes:
1. Pulse testPW 300 μs duty cycle 2%.
2. Guaranteed by design, not subject to production testing.
ID= -11.5A
nC VDS= -15V
VGS= -5V
ID= -1A, VDD= -15V
nS VGEN= -10V
RL=6
http://www.SeCoSGmbH.com/
18-Sep-2013 Rev. D
Any changes of specification will not be informed individually.
Page 2 of 4





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