SSRF90N06

Elektronische Bauelemente SSRF90N06 N-Ch Enhancement Mode Power MOSFET 87A, 60V, RDS(ON) 26.5mΩ RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe ITO-220 saves board space.  Fast switching speed.  High performance trench technology. PRODUCT SUMMARY VDS(V) 60 PRODUCT SUMMARY RDS(on) m( 26.5@VGS= 10V 32.5@VGS= 4.5V ID(A) 87 a  Gate  Drain IT O-220 BN MA D E H JC K LL Dimensions in millimeters G F REF. A B C D E F G Millimeter Min. Max. 15.00 15.60 9.50 10.50 13.00 Min 4.30 4.70 2.50 3.10 2.40 2.80 0.30 0.70 REF. H J K L M N Millimeter Min. Max. 3.00 3.80 0.90 1.50 0.50 0.90 2.34 2.74 2.50 2.90  3.1 3.4  Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS Drain-Source Voltage VDS 60 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Total Power Dissipation a VGS ID @TC=25℃ IDM IS PD @TC=25℃ ±20 87 240 90 300 Operating Junction and Storage Temperature Range T...