N-Channel MOSFET. SSRF90N06 Datasheet

SSRF90N06 MOSFET. Datasheet pdf. Equivalent

Part SSRF90N06
Description N-Channel MOSFET
Feature Elektronische Bauelemente SSRF90N06 N-Ch Enhancement Mode Power MOSFET 87A, 60V, RDS(ON) 26.5mΩ Ro.
Manufacture SeCoS
Datasheet
Download SSRF90N06 Datasheet



SSRF90N06
Elektronische Bauelemente
SSRF90N06
N-Ch Enhancement Mode Power MOSFET
87A, 60V, RDS(ON) 26.5mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench
process to provide Low RDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC converters and power management
in portable and battery-powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe ITO-220 saves board
space.
Fast switching speed.
High performance trench technology.
PRODUCT SUMMARY
VDS(V)
60
PRODUCT SUMMARY
RDS(on) m(
26.5@VGS= 10V
32.5@VGS= 4.5V
ID(A)
87 a

Gate

Drain
IT O-220
BN
MA
D
E
H JC
K
LL
Dimensions in millimeters
G
F
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
15.00 15.60
9.50 10.50
13.00 Min
4.30 4.70
2.50 3.10
2.40 2.80
0.30 0.70
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
3.00 3.80
0.90 1.50
0.50 0.90
2.34 2.74
2.50 2.90
3.1 3.4

Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Total Power Dissipation a
VGS
ID @TC=25
IDM
IS
PD @TC=25
±20
87
240
90
300
Operating Junction and Storage Temperature Range TJ, TSTG
-55 ~ 175
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient a
RθJA
62.5
Maximum Thermal Resistance Junction-Case
RθJC
3.2
Notes
a. Package Limited.
b. Pulse width limited by maximum junction temperature.
UNIT
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
01-Dec-2010 Rev.B
Any changes of specification will not be informed individually.
Page 1 of 4



SSRF90N06
Elektronische Bauelemente
SSRF90N06
N-Ch Enhancement Mode Power MOSFET
87A, 60V, RDS(ON) 26.5mΩ
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBO MIN. TYP. MAX. UNIT TEST CONDITIONS
Static
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
1
-
- 3 V VDS= VGS, ID = 250 μA
- ±100 nA VDS = 0V, VGS= 20V
Zero Gate Voltage Drain Current
On-State Drain Current a
IDSS
ID(on)
-
-
120
-
-
-
1 μA VDS= 48V, VGS= 0V
25 VDS= 48V, VGS= 0V, TJ=55°C
- A VDS = 5V, VGS= 10V
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage
RDS(ON)
-
-
-
-
gfs - 30
VSD - 1.1
Dynamic b
26.5
32.5
-
-
mVGS= 10V, ID= 30 A
VGS= 4.5V, ID= 20 A
S VDS= 15V, ID= 30 A
V IS= 34 A, VGS= 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - 8.5 -
VDS = 15 V
Qgs
- 3.3 - nC VGS = 4.5 V
ID = 90 A
Qgd - 4.0 -
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 18 -
Tr
Td(off)
-
-
59
37
-
-
VDD= 25 V
nS
ID= 34 A
VGEN = 10 V
RL= 25
Tf - 9 -
Notes
a. Pulse testPulse width 300 μs, duty cycle 2.
b. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
01-Dec-2010 Rev.B
Any changes of specification will not be informed individually.
Page 2 of 4





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