N-CHANNEL MOSFET
Features
• Excellent Package for Heat Dissipation • High Density Cell Design for Low RDS(ON) • Epoxy Meets UL 94 V-0 Fla...
Description
Features
Excellent Package for Heat Dissipation High Density Cell Design for Low RDS(ON) Epoxy Meets UL 94 V-0 Flammability Rating
Moisture Sensitivity Level 1
Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
Operating Junction Temperature Range : -55°C to +150°C Storage Temperature Range: -55°C to +150°C Thermal Resistance: 5°C/W Junction to Case
Parameter
Symbol
Drain-Source Voltage
Gate-Source Volltage
Continuous Drain Current Pulsed Drain Current
TC=25°C TC=100°C
Avalanche Energy, Single Pulse(Note1)
Total Power Dissipation
VDS VGS
ID
IDM EAS PD
Rating 60 ±20 30 19 130 100 30
Note: 1. Tj=25°C, VDD=40V, VG=10V, L=0.5mH, Rg=25Ω
Unit V V A A A mJ W
Internal Structure
D D DD 8 7 65
1 2 34 S S SG
Marking:MCAC30N06Y
MCAC30N06Y
N-CHANNEL MOSFET
DFN5060
B HD A
PIN 1 J
G C
N
E F
K
M L
DIMENSIONS
DIM
INCHES
MM
MIN MAX MIN MAX
A 0.031 0.047 0.80 1.20
B 0.010
0.254
C 0.193 0.222 4.90 5.64
D 0.232 0.250 5.90 6.35
E 0.148 0.167 3.75 4.25
F 0.126 0.154 3.20 3.92
G 0.189 0.213 4.80 5.40
H 0.222 0.239 5.65 6.06
K 0.045 0.059 1.15 1.50
J 0.012 0.020 0.30 0.50
L 0.046 0.054 1.17 1.37
M 0.012 0.028 0.30 0.71
N 0.016 0.028 0.40 0.71
NOTE TYP.
Rev.3-1-01202019
1/4
MCCSEMI.COM
Electrical Characteristics @ 25°C (Unless OtherwiseSpecified)
Parameter
Symbol
Test conditions
Static Parameter
Drain-Source...
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