MCU60P06

MCU60P06 Features High Density Cell Desihn for Ultra Low RDS(on) Fully Characterized Avalanche Voltage and Current Good Stability and Uniformity with High EAS Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55°C to +175°C Storage Temperature Range: -55°C to +175°C Thermal Resistance: 1.15°C/W Junction to Case(Note 1) Parameter Symbol Rating Drain-Source Voltage VDS -60 Gate-Source Volltage VGS ±20 TC=25°C Continuous Drain Current -60 ID TC=100°C -42.3 Pulsed Drain Current Single Pulse Avalanche Energy (Note 2) IDM EAS -260 722 Total Power Dissipation PD 130 Note: 1.Surface Mounted on FR4 Board, t ≤ 10 sec. 2.TJ=25°C,VDD=-30V,VG=-10V,L=0.5mH,Rg=25Ω. Unit V V A A A mJ W Internal Structure D G S P-CHANNEL MOSFET DPAK(TO-252) J H C1 O 2 4 FE I 3 M KV G L Q A BD 1. Gate 2,4. Drain 3. Source DIMENSIONS DIM INCHES MM MIN MAX MIN MAX A 0.087 0.094 2.20 2.40 B 0.000 0.005 0.00 0.13 C 0.026 0.034 0.66 0.86 D 0.018 0.023 0.46 0.58 E 0.256 0.264 6.50 6.70 F 0.201 0.215 5.10 5.46 G 0.190 4.83 H 0.236 0.244 6.00 6.20 I 0.086 0.094 2.18 2.39 J 0.386 0.409 9.80 10.40 K 0.114 2.90 L 0.055 0.067 1.40 1.70 M 0.063 1.60 O 0.043 0.051 1.10 1.30 Q 0.000 0.012 0.00 0.30 V 0.211 5.35 NOTE TYP. TYP....