VARIABLE CAPACITANCE DIODE
SEMICONDUCTOR
TECHNICAL DATA
TV TUNING.
FEATURES High Capacitance Ratio : C2V/C25V=6.3(Min.) Low Series Resistance : rS=...
Description
SEMICONDUCTOR
TECHNICAL DATA
TV TUNING.
FEATURES High Capacitance Ratio : C2V/C25V=6.3(Min.) Low Series Resistance : rS=0.57 (Max.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING 32 125
-55 125
UNIT V
KDV214
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK E A K
F L
B 1
G
H
2 D
MM 1. ANODE 2. CATHODE
J C
I
DIM MILLIMETERS A 2.50 +_ 0.1 B 1.25+_ 0.05 C 0.90 +_0.05 D 0.30+0.06/-0.04 E 1.70 +_ 0.05 F MIN 0.17 G 0.126 +_ 0.03 H 0~0.1 I 1.0 MAX J 0.15 +_0.05 K 0.4 +_0.05 L 2 +4/-2 M 4~6
USC
Marking
UO
Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current
IR
Capacitance
C2V
Capacitance
C25V
Capacitance Ratio
C2V/C25V
Series Resistance
rS
Note : Available in matched group for capacitance to 2.0%. C(Max.)-C(Min.) 0.02 C(Min.)
(VR=2~25V)
TEST CONDITION VR=28V VR=2V, f=1MHz VR=25V, f=1MHz
VR=5V, f=470MHz
MIN. -
14.15 2.06 6.3
-
TYP. -
MAX. 10
15.75 2.35
0.57
UNIT nA pF pF -
2008 .9. 11
Revision No : 4
1/2
REVERSE CURRENT IR (A)
KDV214
-10
10
IR - VR
-11
10
-12
10
-13
10 0
10 20 30 REVERSE VOLTAGE VR (V)
40
TOTAL CAPACITANCE CT (pF)
C T - VR
20 f=1MHz
15
10
5
0 1 10 50 REVERSE VOLTAGE VR (V)
0.6 0.5 0.4 0.3 0.2 0.1
0 1
r s - VR
f=470MHz
10 REVERSE VOLTAGE VR (V)
50
∆(LOG CT) / ∆(LOG VR)
∆(LOG CT) / ∆(LOG...
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