KDV239

SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF RADIO. FEATURES Ultra Low Series Resistance : rS=0.44 (Typ.) Small Package. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 15 150 -55 150 UNIT V KDV239 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK E A K F L B 1 G H 2 D MM 1. ANODE 2. CATHODE J C I DIM MILLIMETERS A 2.50 +_ 0.1 B 1.25+_ 0.05 C 0.90 +_0.05 D 0.30+0.06/-0.04 E 1.70 +_ 0.05 F MIN 0.17 G 0.126 +_ 0.03 H 0~0.1 I 1.0 MAX J 0.15 +_0.05 K 0.4 +_0.05 L 2 +4/-2 M 4~6 USC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage VR Reverse Current IR Capacitance C2V C10V Capacitance Ratio K Series Resistance rS TEST CONDITION IR=1 A VR=15V VR=2V, f=1MHz VR=10V, f=1MHz C2V/C10V, f=1MHz VR=1V, f=470MHz MIN. 15 3.8 1.5 2.0 - TYP. - 4.25 1.75 2.4 0.44 MAX. 3 4.7 2.0 0.6 UNIT V nA pF 2008. 9. 11 Revision No : 2 1/2 KDV239 2008 .9 .11 Revision No : 2 2/2 ...