KDV239E

SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF RADIO. FEATURES Ultra Low Series Resistance : rS=0.44 (Typ.) Small Package. (ESC Package) KDV239E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CE 1 CATHODE MARK B A MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 15 150 -55 150 UNIT V 2 D 1. ANODE 2. CATHODE F DIM A B C D E F MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 ESC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Reverse Current Capacitance VR IR C2V C10V Capacitance Ratio K Series Resistance rS TEST CONDITION IR=1 A VR=15V VR=2V, f=1MHz VR=10V, f=1MHz C2V/C10V, f=1MHz VR=1V, f=470MHz MIN. 15 3.8 1.5 2.0 - TYP. - 4.25 1.75 2.4 0.44 MAX. 3 4.7 2.0 0.6 UNIT V nA pF 2000. 3. 7 Revision No : 0 1/2 KDV239E 2000. 3. 7 Revision No : 0 2/2 ...